2019 IEEE Pulsed Power & Plasma Science (PPPS)最新文献

{"title":"Determination of the particles involved in anode initiated vacuum breakdown using a 1-MV, 50-Nanosecond pulse generator","authors":"R. Allen, D. Hinshelwood, S. Jackson, P. Ottinger, I. Rittersdorf, J. Schumer","doi":"10.1109/PPPS34859.2019.9009926","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009926","url":null,"abstract":"Several experiments have shown that the anode initiates breakdown of vacuum gaps in cases where the anode and cathode field enhancements are approximately equal [1]. The previous understanding was that only explosive emission at the cathode initiates breakdown between metal electrodes in vacuum with nanosecond pulses. Past experiments have shown clear evidence of particles from the anode initiating breakdown when the cathode was not specially roughened or treated to increase field enhancement. However, the type of particles coming from the anode was not known. Now, we have measurements from a specially designed anode-cathode structure that has allowed us to capture these particles. CR-39 film was used as a particle detector. A Thomson parabola and also a Kimfol filter allowed us to determine the particle species.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123497734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Effect on the Surface Flashover Plasma of the GIS Insulator","authors":"Shi-jie Lu, Liangen Zhang, Hongtao Zhong, G. Ma, Cheng-Rong Li, Yu Yin, B. Cui, Yu-yi Wu","doi":"10.1109/PPPS34859.2019.9009862","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009862","url":null,"abstract":"Flashover plasma across an epoxy sulfur hexafluoride interface in gas insulated switchgear (GIS) may induce blockage of power cut. However, characteristics of flashover plasma across an epoxy sulfur hexafluoride interface under the operation temperature of GIS (80°C) were less discussed previously. In this work, a high voltage experiment setup was built to investigate the temperature effect on the surface flashover plasma. The voltage, current, acoustic and ultra-high frequency signals were obtained with different kind of sensors. The experiments indicate that the flashover voltage reduced 11.74% when temperature increased from 20°C to 80°C. The distributions of electric field, temperature and the gas density were also simulated. A particle-in-cell model including field electron emission and temperature was developed to discuss the temperature effect. From the simulation results, it can be concluded that at higher temperature, it is more likely to develop flashover across an epoxy sulfur hexafluoride interface initiated by field electron emission. This work will give a reference for evaluation and design of epoxy sulfur hexafluoride interface for high-voltage GIS applications.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115245221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of an RF circuit amplifier fed by a low power nonlinear transmission line","authors":"L. P. Silva Neto, H. M. Moraes, J. O. Rossi, J. Barroso, E. Rangel, A. F. Conceição","doi":"10.1109/PPPS34859.2019.9009881","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009881","url":null,"abstract":"Lumped nonlinear transmission lines have been studied for the generation of radio frequency signals in the range of the order of tens of MHz up to a few hundreds of MHz depending on the nonlinear element used in the LC line. The oscillations obtained at the output of these lines are applied in defense mobile platforms and communications systems. Low power nonlinear transmission lines use varactor diodes as nonlinear elements, which show a strong nonlinear effect with capacitance variation of the order of 90% at their P - N junction with the applied voltage, which is an excellent performance to obtain oscillations at the line output. However, these semiconductor devices operate at low voltage, producing small voltage modulation depth, low power, and consequently reduced signal range. Looking for increasing the voltage modulation depth of the signal generated with nonlinear transmission lines, this work developed a radiofrequency amplifier using a Metal Oxide Semiconductor Field Effect Transistor - MOSFET model RD06HVF1. A 30-section line using varactor diodes MV209 as nonlinear elements can work as an RF source to obtain oscillations with a frequency of 33.3 MHz at the line output. By means of SPICE simulations, it has been demonstrated that an amplifier circuit connected to the output of this varactor diode transmission line can produce an increase of the voltage modulation depth produced at line output from 10.7 V to 40 V approximately, thus allowing higher level power to electromagnetic wave propagation and consequently higher signal range. Experimental comparison using a PCB prototype with the corresponding simulation will be also shown.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas Temperature Determination of Nonthermal Plasma Through Boltzmann Plot Method","authors":"M. Ashford, L. Forte, J. Allen, B. Onyenucheya, K. Thompson, J. Zirnheld, K. Burke","doi":"10.1109/PPPS34859.2019.9009911","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009911","url":null,"abstract":"Nonthermal plasma (NTP) causes delayed melanoma cell death which is indicative of apoptosis. The NTP is produced by applying a high voltage signal to helium gas, causing ionization of a combination composed of neutral gas molecules and ambient air. By exploring the plasma's physical temperature, the energy exchanged during the plasma-cell interaction can be further understood. The NTP discharge contains radical species including ions, electrons, and neutrals. The temperature of the electrons exceeds the temperature of the gas due to high energy collisions which suggest that the NTP is not in a state of local thermodynamic equilibrium (LTE). The gas temperature can be understood as the physical temperature the test sample undergoes during the application of the plasma discharge. In order to determine the temperature of the gas, the Boltzmann plot method (BPM) has been utilized. This diagnostic has been used to estimate the physical temperature of the gas using spectroscopic measurements of the OH(A2Σ+,v = 0) → OH(X2 II,v = 0) molecular electronic transition and the N2+(A3Σ+) → N2+(X1Σ+) molecular electronic transition in the NTP discharge. For the application of the BPM, it is assumed the upper state of at least two spectral lines in the given transitions can be distinguished, the transition probabilities are accurately identified, and the plasma under study is in LTE. Even though the NTP is not in LTE, the temperature can still be resolved if the uncertainties of these assumptions are factored into calculations. The comparison of spectral standards to experimentally measured spectra under high resolution, provides a model of NTP temperature.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128980621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Analysis of a Compact Pulse Forming Stage and a Microstrip Type Balun for High Power Electromagnetics Applications","authors":"O. E. Demirgoz","doi":"10.1109/PPPS34859.2019.9009737","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009737","url":null,"abstract":"High power microwaves can be used in the field of medical, military and civil applications like cancer treatment, destruction of some explosive devices, food preservation etc. This paper presents the design and experiment results of a high power ultra-wide band source. The system mainly consists of a low inductance Marx Generator, Pulse Forming Stage (PFS), a balun and a linear TEM Horn antenna. The power supply is a coaxial Marx generator composed of 16 stages. In this configuration, the rise time of the output signal can be less than 15 ns with an operating voltage reaching values up to 200 kV with an open circuit configuration. This study especially focused on the design of the PFS which includes a spark gap and a peaking capacitor. A compact and coaxial PFS is designed with 50 Ω characteristic impedance and directly connected to the output of the Marx Generator. Then a linear TEM Horn antenna with a customized microstrip balun is integrated to the output of the PFS. Effects of the system inductance to the rise time of the signal is observed. The PFS, balun and the antenna has been simulated together and the spark gap is simulated as a short circuit. Results of CST simulations like S11 parameters across a broad frequency range 200 MHz to 2 GHz of the system and the radiation patterns of the antenna are shown in this paper. A D-dot probe is used to measure the electric displacement value at the different distances from the antenna and the results are compared with the simulations and good agreement is observed. A capacitor voltage divider is also constructed to determine the output signal of the PFS and preliminary tests show that the system can produce pulses which have the rise time under 1 ns.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"136 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128744750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of a New 15-kV SiC n-GTO under Pulsed Power Applications","authors":"M. Kim, T. Tsoi, J. Forbes, A. Bilbao, S. Lacouture, S. Bayne, H. O’Brien, A. Ogunniyi, S. Ryu","doi":"10.1109/PPPS34859.2019.9009743","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009743","url":null,"abstract":"Silicon carbide (SiC) gate turn-off thyristors (GTOs) are an appropriate option for increased power density and thermal dissipating capabilities in pulsed power and power electronics applications due to their enhanced material characteristics. For the transition of silicon (Si)power devices to SiC, it is imperative to evaluate the long-term reliability of newly developed SiC devices. The testbed for this experiment consists of a pulse forming network (PFN) () that subjects the device under test (DUT) a 15-kV SiC n-type (n-doped epi layer) GTO, up to a current level of 1.0 kA with a pulse width of 120 µs, The static electrical characteristics of the device, such as the forward I- V curve, forward gate conduction, and forward hold-off were taken between testing. Scanning electron microscope (SEM) imaging was used to find physical evidence of degradation on the device. The DUT was subjected to 20,000 high-current density pulses, at which point it exhibited no major changes in blocking capability.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128327437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal Design of a High Voltage High Frequency Transformer and Power Drive System for Long Pulse Modulators","authors":"M. Collins, C. Martins","doi":"10.1109/PPPS34859.2019.9009640","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009640","url":null,"abstract":"The stacked multi-level (SML) klystron modulator topology has been suggested as an alternative to conventional pulse transformer based topologies in an attempt to improve output pulse performance and reduce system size for long pulse applications. In this topology, a power converter chain including a high frequency transformer generates the output pulse in a pulse modulation/demodulation scheme, eliminating the direct size-pulse length dependency while allowing higher degree of freedom in design. However, increased complexity necessitates careful consideration from a system perspective to ensure appropriate component selection and design. First, from the perspective of the semiconductor switches, the pulsed nature of the load must be taken into account. High modulator average and peak powers are combined into a power cycling problem where lifetime issues must be managed when selecting semiconductor technology and converter operating frequency. Simultaneously, these considerations are directly coupled to the design of the high voltage high frequency transformer, the largest component in the SML chain, key in reducing modulator footprint and volume. In addition, appropriate passive components (snubbers) must be chosen with respect to transformer leakage inductance, switching frequency and switch ratings to constrain voltage overshoot without deteriorating system efficiency. In this paper, these integrated design considerations are combined with a catalog of IGBT switches available on the market to form an optimization algorithm set to minimize transformer volume, indicative of system oil tank volume, while ensuring high system efficiency and long semiconductor lifetime. The tradeoffs between system efficiency and volume are studied. Finally, the algorithm is used to outline the design procedure for a system rated for pulse amplitude 115 kV / 100 A, pulse length 3.5 ms, pulse repetition rate 14 Hz, efficiency>91%, lifetime>25 years. The derived design is validated through circuit simulation, 3D finite element analysis, and experiments.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121165536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Comparison of Commercial Gan Hemt under Repetitive Overcurrent Operations","authors":"J. Rodríguez, Matthew Kim, S. Bayne, H. O’Brien, A. Ogunniyi","doi":"10.1109/PPPS34859.2019.9009755","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009755","url":null,"abstract":"Gallium nitride (GaN) high-electron-mobility transistors (HEMT) are of great interest for pulsed power applications due to their proven capabilities in RF applications. With further advances in GaN power semiconductors, there's an interest in the evaluation of their performance under repetitive overcurrent operation in power electronics applications beyond the manufacturer's prescribed operating parameters. A GaN HEMT from two different vendors were evaluated in a pulsed ring down testbed at 475 V with a peak current above 80 A over a repetition rate of 138 Hz. The testbed employed a temperature chamber to adjust the case temperature of the device during testing. The devices' electrical characteristics, such as transconductance, forward I-V curve and reverse blocking voltage were measured throughout testing and have not shown significant degradation. The collected data from these measurements allowed a comparison of the devices' performance and shows their ability to handle transient overcurrent conditions commonly found in power semiconductor device applications.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125777039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of An Electron-Beam Pumped, Argon Fluoride Laser for Inertial Confinement Fusion","authors":"M. Myers, M. Wolford, A. Schmitt, T. Petrova, G. Petrov, J. Giuliani, M. McGeoch, S. Obenschain","doi":"10.1109/PPPS34859.2019.9009786","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009786","url":null,"abstract":"The U.S. Naval Research Laboratory (NRL) has converted the repetitively pulsed Electra krypton fluoride (KrF) laser system to an electron-beam (e-beam) pumped argon fluoride (ArF) laser. Operating at 193 nm, ArF has the potential of being the most efficient excimer laser. Due to the shorter ultraviolet (UV) wavelength and broad native bandwidth, the ArF laser is a compelling candidate for an inertial confinement fusion (ICF) driver. Experiments conducted in amplifier and oscillator configurations have produced initial data on the small signal gain, intrinsic efficiency, and laser yield. These measurements are compared with the ArF kinetics code Orestes, under development at NRL.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126590863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characteristics of nanosecond pulsed discharge type ozonizer with a tube to cylinder reactor","authors":"Hiroki Hidaka, D. Ikoma, Kanji. Sasaki, T. Namihira, Douyan Wang","doi":"10.1109/PPPS34859.2019.9009856","DOIUrl":"https://doi.org/10.1109/PPPS34859.2019.9009856","url":null,"abstract":"Ozone characteristics such as strong oxidation power and no-residual toxicity makes it highly expected as a next-generation oxidant. Ozone has been used mainly in clarification of drinking water and industrial wastewater treatments. In recent years, ozone generation by pulsed power technique has been studied. In our laboratory, nanosecond (ns) pulse generator which produces non-thermal plasma has been developed to generate ozone. It has been demonstrated that ns pulsed discharge is effective for high efficiency ozone generation. However, there is still a problem that the maximum ozone concentration saturates at approximately 40 g/m3. The ozone concentration required for water purification application is typically 100–120 g/m3. Therefore, improvement of ozone concentration using ns discharge method is necessary. It is assumed that one of the main cause of ozone concentration saturation is ozone thermal decomposition due to gas temperature rise. In our previous studies, gas temperature rise was observed in the vicinity of the high voltage applied wire electrode in a wire to cylinder electrode geometry. Therefore, a new electrode has been developed in the present study by employing a tube to cylinder electrode geometry. Thus, the high voltage applied tube electrode enables to pass through cooling medium inside of the tube. Characteristics of ozone generation using the tube to cylinder electrode will be presented in this paper. Furthermore, the effect of Helium gas addition to the seeding gas is investigated. As a result, it was deduced that tube to cylinder electrode system and Helium gas addition are effective for increasing ozone concentration.","PeriodicalId":103240,"journal":{"name":"2019 IEEE Pulsed Power & Plasma Science (PPPS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126880892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}