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Applications of Silicon Photonics in Sensors and Waveguides最新文献

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Introductory Chapter: Unique Applications of Silicon Photonics 导论:硅光子学的独特应用
Applications of Silicon Photonics in Sensors and Waveguides Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.78963
L. Kallepalli
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引用次数: 0
Digital Optical Switches with a Silicon-on-Insulator Waveguide Corner 带有绝缘体上硅波导角的数字光开关
Applications of Silicon Photonics in Sensors and Waveguides Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.76584
DeGui Sun
{"title":"Digital Optical Switches with a Silicon-on-Insulator Waveguide Corner","authors":"DeGui Sun","doi":"10.5772/INTECHOPEN.76584","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76584","url":null,"abstract":"In this chapter, the quantum process of the Goos-Hänchen (GH) spatial shift is first derived out, then the coherence between spatial and angular shifts in the GH effect in the quantum state is discovered and a function of digital optical switch is developed. It is found that a waveguide corner structure always makes the reflected guide-mode have both the GH spatial and angular shifts when the incident beam is in the vicinity area of critical and Brewster angles. Meanwhile, these two GH shifts have the interesting coherent distributions with the incident angle, and only in the common linear response area the two GH shifts are mutual enhancing, then a mini refractive index modulation (RIM) of guided mode at the reflecting interface can create a great stable jump of reflected beam displacement at an eigenstate. As a result, on 220 nm silicon-on-insulator (SOI) waveguide platform, with a tapered multimode interference (MMI) waveguide a 5.0 × 10 18 cm − 3 concentration variation of free carriers can cause a digital total 8–25 μm displacement of the reflected beam on the MMI output end, leading to a 1 × N scale digital optical switching function. As a series of verifications, the numerical calculations, finite difference time domain (FDTD) simulations and experiments, are sustainable to the quantum GH shifts. of total GH displacement, and digital optical switch","PeriodicalId":102017,"journal":{"name":"Applications of Silicon Photonics in Sensors and Waveguides","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129195497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Macroporous Silicon for Gas Detection 气体检测用大孔硅
Applications of Silicon Photonics in Sensors and Waveguides Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.76439
D. Vega, Ángel Rodríguez
{"title":"Macroporous Silicon for Gas Detection","authors":"D. Vega, Ángel Rodríguez","doi":"10.5772/INTECHOPEN.76439","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76439","url":null,"abstract":"Macroporous silicon (MPS) has been shown to be a promising material in many areas of technical interest. In particular, MPS has been applied for electronic devices and microfluidic applications. One of the most promising features of MPS is that it enables the development of optical applications using simple and cost-effective technology, compatible with MEMS fabrication processes and suitable for mass production. This chapter describes the application of MPS structures fabricated using electrochemical etching (EE) for the detection of gases of environmental concern in the wavelength range comprising 4 μm to 15 μm, such as CO2. Vertical-modulated MPS structures are reported, whose photonic bandgaps can be placed at different wavelengths depending on the application needs. These structures have been applied to the quantification of CO2, and these results are summarised here. Detection is performed by the direct measure of absorption, obtaining promising results with short optical paths.","PeriodicalId":102017,"journal":{"name":"Applications of Silicon Photonics in Sensors and Waveguides","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129247294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Study of Porous Silicon Films 多孔硅膜的实验研究
Applications of Silicon Photonics in Sensors and Waveguides Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.74479
Salah Rahmouni, L. Zighed
{"title":"Experimental Study of Porous Silicon Films","authors":"Salah Rahmouni, L. Zighed","doi":"10.5772/INTECHOPEN.74479","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.74479","url":null,"abstract":"In the present study, porous silicon films were prepared on Nand P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.","PeriodicalId":102017,"journal":{"name":"Applications of Silicon Photonics in Sensors and Waveguides","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133939206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New Approach to Mach-Zehnder Interferometer (MZI) Cell Based on Silicon Waveguides for Nanophotonic Circuits 纳米光子电路中基于硅波导的Mach-Zehnder干涉仪(MZI)电池的新方法
Applications of Silicon Photonics in Sensors and Waveguides Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.76181
T. Le
{"title":"New Approach to Mach-Zehnder Interferometer (MZI) Cell Based on Silicon Waveguides for Nanophotonic Circuits","authors":"T. Le","doi":"10.5772/INTECHOPEN.76181","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76181","url":null,"abstract":"In this chapter, we present a new scheme for Mach-Zehnder Interferometer (MZI) struc- ture based on only one 4 (cid:1) 4 multimode interference (MMI) coupler. We design the new MZI cell on the silicon on insulator (SOI) platform. The MZI based on directional coupler and 2 (cid:1) 2 MMI coupler is also investigated in detail. The new MZI cell is a basic building block for photonic applications such as optical quantum gate, optical computing and reconfigurable processors. The numerical simulations show that our approach has advantages of compact size, ease of fabrication with the current complementary metal oxide semiconductor (CMOS) circuitry.","PeriodicalId":102017,"journal":{"name":"Applications of Silicon Photonics in Sensors and Waveguides","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129852795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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