{"title":"多孔硅膜的实验研究","authors":"Salah Rahmouni, L. Zighed","doi":"10.5772/INTECHOPEN.74479","DOIUrl":null,"url":null,"abstract":"In the present study, porous silicon films were prepared on Nand P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.","PeriodicalId":102017,"journal":{"name":"Applications of Silicon Photonics in Sensors and Waveguides","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental Study of Porous Silicon Films\",\"authors\":\"Salah Rahmouni, L. Zighed\",\"doi\":\"10.5772/INTECHOPEN.74479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present study, porous silicon films were prepared on Nand P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.\",\"PeriodicalId\":102017,\"journal\":{\"name\":\"Applications of Silicon Photonics in Sensors and Waveguides\",\"volume\":\"121 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Silicon Photonics in Sensors and Waveguides\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5772/INTECHOPEN.74479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Silicon Photonics in Sensors and Waveguides","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5772/INTECHOPEN.74479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the present study, porous silicon films were prepared on Nand P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.
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