Surface Science Letters最新文献

筛选
英文 中文
A calculation of the photovoltage at the metal-semiconductor interface 金属-半导体界面处光电压的计算
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91105-W
C.C. Ling, T.P. Chen, S. Fung
{"title":"A calculation of the photovoltage at the metal-semiconductor interface","authors":"C.C. Ling, T.P. Chen, S. Fung","doi":"10.1016/0167-2584(93)91105-W","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91105-W","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A669"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91105-W","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91676410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of subsurface Na, H and C on the bonding of carbon to nickel surfaces 表面下Na、H和C对碳与镍表面成键的影响
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91086-4
Hong Yang, Jerry L. Whitten, Robert J. Markunas
{"title":"Effects of subsurface Na, H and C on the bonding of carbon to nickel surfaces","authors":"Hong Yang,&nbsp;Jerry L. Whitten,&nbsp;Robert J. Markunas","doi":"10.1016/0167-2584(93)91086-4","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91086-4","url":null,"abstract":"<div><p>This paper reports the results of a theoretical study of Na, H and C subsurface atomic species in nickel and demonstrates how these interstitial atoms influence the reactivity of the Ni(111) surface and the structure of carbon species adsorbed on the surface. The benzene molecule, C<sub>6</sub>H<sub>6</sub>, in planar and nonplanar geometries, is used to probe bonding at the surface. Adsorption energies are calculated by ab initio configuration techniques modelling the surface as an embedded cluster. Adsorption energies of planar C<sub>6</sub>H<sub>6</sub> at the most stable, three-fold, adsorption site are 18 kcal/mol for the Ni(111) surface, and 10, 19 and 44 kcal/mol in the presence of the Na, H and C interstitials, respectively. The energies required for the planar to puckered distortion are 99 kcal/mol on Ni(111), 69 kcal/mol with the Na interstitial, 83 kcal/mol with H, and 134 kcal/mol with C compared to 198 kcal/mol for distortion of C<sub>6</sub>H<sub>6</sub> in the gas phase. The possible relevance of these results to the nucleation of diamond on nickel are discussed. The results indicate that subsurface Na stabilizes tetrahedrally bonded carbon subunits of the diamond structure while subsurface C may make it easier for the overlayer to revert to a planar graphite structure.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Pages L945-L951"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91086-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91676412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diffusion behavior of single adatoms near and at steps during growth of metallic thin films on Ni surfaces Ni表面金属薄膜生长过程中单原子的近步和步扩散行为
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91091-2
Chun-Li Liu, JamesB. Adams
{"title":"Diffusion behavior of single adatoms near and at steps during growth of metallic thin films on Ni surfaces","authors":"Chun-Li Liu,&nbsp;JamesB. Adams","doi":"10.1016/0167-2584(93)91091-2","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91091-2","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A664"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91091-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137004833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural properties of heteroepitaxial C60 films on CaF2(111) CaF2(111)上异质外延C60薄膜的结构特性
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91088-6
S. Fölsch, T. Maruno, A. Yamashita, T. Hayashi
{"title":"Structural properties of heteroepitaxial C60 films on CaF2(111)","authors":"S. Fölsch,&nbsp;T. Maruno,&nbsp;A. Yamashita,&nbsp;T. Hayashi","doi":"10.1016/0167-2584(93)91088-6","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91088-6","url":null,"abstract":"<div><p>Epitaxially grown C<sub>60</sub> films on CaF<sub>2</sub>(111) substrates have been studied by reflection high-energy electron diffraction at deposition temperatures of 30–300°C and average thicknesses of 1–50 nm. At these temperatures and thicknesses, C<sub>60</sub> forms an incommensurate overgrowth of fcc-stacked hexagonal layers with a characteristic nearest-neighbor spacing of 0.99 nm.</p><p>Deposition temperatures below 150°C result in unidirectional growth in accordance with the crystallographic directions of the substrate. Higher deposition temperatures, however, result in two equivalent, rotated domain orientations characterized by a significantly lower degree of lattice mismatch (3% versus 16% for the unidirectional arrangement). The C<sub>60</sub> films grown at high temperature produce brilliant reflection patterns indicating a high degree of long-range order, uniformity and flatness.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Pages L959-L963"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91088-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91676413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
UHV transmission electron microscopy of Ir(001) 特高压红外透射电子显微镜(001)
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91101-S
L.D. Marks, P. Xu, D.N. Dunn
{"title":"UHV transmission electron microscopy of Ir(001)","authors":"L.D. Marks,&nbsp;P. Xu,&nbsp;D.N. Dunn","doi":"10.1016/0167-2584(93)91101-S","DOIUrl":"10.1016/0167-2584(93)91101-S","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A667"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91101-S","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80359570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermodynamics and statistical mechanics of the faceting of stepped Si(111) 阶梯硅表面的热力学和统计力学(111)
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91093-4
EllenD. Williams, R.J. Phaneuf, Jian Wei, N.C. Bartelt, T.L. Einstein
{"title":"Thermodynamics and statistical mechanics of the faceting of stepped Si(111)","authors":"EllenD. Williams,&nbsp;R.J. Phaneuf,&nbsp;Jian Wei,&nbsp;N.C. Bartelt,&nbsp;T.L. Einstein","doi":"10.1016/0167-2584(93)91093-4","DOIUrl":"10.1016/0167-2584(93)91093-4","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Pages A664-A665"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91093-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53714188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 76
In-situ studies of heterogeneous reactions using mirror electron microscopy 用镜像电子显微镜原位研究非均相反应
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91099-A
W. Świȩch, B. Rausenberger, W. Engel, A.M. Bradshaw, E. Zeitler
{"title":"In-situ studies of heterogeneous reactions using mirror electron microscopy","authors":"W. Świȩch,&nbsp;B. Rausenberger,&nbsp;W. Engel,&nbsp;A.M. Bradshaw,&nbsp;E. Zeitler","doi":"10.1016/0167-2584(93)91099-A","DOIUrl":"10.1016/0167-2584(93)91099-A","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A667"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91099-A","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53714230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Surface melting and superheating 表面熔化和过热
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91097-8
Y. Teraoka
{"title":"Surface melting and superheating","authors":"Y. Teraoka","doi":"10.1016/0167-2584(93)91097-8","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91097-8","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A666"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91097-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137004835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Water adsorption on Cu(100): the effect of defects 水对Cu(100)的吸附:缺陷的影响
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91094-5
R. Brosseau, M.R. Brustein, T.H. Ellis
{"title":"Water adsorption on Cu(100): the effect of defects","authors":"R. Brosseau,&nbsp;M.R. Brustein,&nbsp;T.H. Ellis","doi":"10.1016/0167-2584(93)91094-5","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91094-5","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Page A665"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91094-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136829689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Kinetic isotope effect in direct ethane dissociation on Pt(111) Pt(111)上乙烷直接解离的动力学同位素效应
Surface Science Letters Pub Date : 1993-09-10 DOI: 10.1016/0167-2584(93)91110-A
MarkC. McMaster, RobertJ. Madix
{"title":"Kinetic isotope effect in direct ethane dissociation on Pt(111)","authors":"MarkC. McMaster,&nbsp;RobertJ. Madix","doi":"10.1016/0167-2584(93)91110-A","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91110-A","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"294 3","pages":"Pages A670-A671"},"PeriodicalIF":0.0,"publicationDate":"1993-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91110-A","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91701054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信