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Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth 分子束外延生长过程中Si/SiGe超晶格中Sb的自调制掺入
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91048-S
K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito, K. Nakagawa
{"title":"Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth","authors":"K. Fujita, S. Fukatsu, N. Usami, Y. Shiraki, H. Yaguchi, R. Ito, K. Nakagawa","doi":"10.1016/0167-2584(93)91048-S","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91048-S","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Page A700"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91048-S","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136906403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Erratum to “Surface self-diffusion studies on the W(112) plane by the field emission method” [Surface Science 266 (1992) 30] 对“用场发射法在W(112)平面上的表面自扩散研究”的勘误[表面科学266 (1992)30]
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91062-S
Yun Ming Gong
{"title":"Erratum to “Surface self-diffusion studies on the W(112) plane by the field emission method” [Surface Science 266 (1992) 30]","authors":"Yun Ming Gong","doi":"10.1016/0167-2584(93)91062-S","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91062-S","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Page A707"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91062-S","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91760737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrons at metal-insulator interfaces 金属绝缘体界面上的电子
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91054-R
W.R. Merry, R.E. Jordan, D.F. Padowitz, C.B. Harris
{"title":"Electrons at metal-insulator interfaces","authors":"W.R. Merry, R.E. Jordan, D.F. Padowitz, C.B. Harris","doi":"10.1016/0167-2584(93)91054-R","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91054-R","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Page A703"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91054-R","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136886899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption 氢吸附诱导Si(001)表面的原子和电子结构
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91039-Q
Toshihiro Uchiyama , Masaru Tsukada
{"title":"Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption","authors":"Toshihiro Uchiyama ,&nbsp;Masaru Tsukada","doi":"10.1016/0167-2584(93)91039-Q","DOIUrl":"10.1016/0167-2584(93)91039-Q","url":null,"abstract":"<div><p>The initial stage of hydrogen (H) adsorption on the Si(001) surface is theoretically investigated to clarify the atomic and electronic structure induced by the adsorption. For this purpose, the electronic states are calculated in the density functional approach with the DV(discretized variation)-Xα-LCAO method. We also simulate the scanning tunneling microscopy (STM) image and the scanning tunneling spectroscopy (STS) spectrum in the first-principles approach. Our results of the STM image do not support the asymmetric dimer structure of the substrate with a H atom bonded to the upper Si atom. They conclude that the bright ball-like spot in the observed images comes from the free dangling bond induced on the remaining Si atom of the reacted dimer. However, the single particle picture cannot reproduce the observed features of the STS spectrum at the spot. We discuss that all the features can be well explained by the Coulomb blockade effect due to the electron correlation in the dangling bond state.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Pages L1037-L1042"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91039-Q","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53713698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation studies of Ge surface segregation during gas source MBE growth of Si/Si1−χGeχ heterostructures Si/Si1异质结构气源MBE生长过程中Ge表面偏析的模拟研究
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91047-R
N. Ohtani, S.M. Mokler, B.A. Joyce
{"title":"Simulation studies of Ge surface segregation during gas source MBE growth of Si/Si1−χGeχ heterostructures","authors":"N. Ohtani,&nbsp;S.M. Mokler,&nbsp;B.A. Joyce","doi":"10.1016/0167-2584(93)91047-R","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91047-R","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Page A700"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91047-R","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91759749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Fano-Anderson model applied to electrons in MIS-inversion layers Fano-Anderson模型应用于mis反转层中的电子
Surface Science Letters Pub Date : 1993-10-01 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91053-Q
B. Freytag, U. Rössler
{"title":"The Fano-Anderson model applied to electrons in MIS-inversion layers","authors":"B. Freytag,&nbsp;U. Rössler","doi":"10.1016/0167-2584(93)91053-Q","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91053-Q","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 3","pages":"Page A702"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91053-Q","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91759752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Excitation processes in collisions of inert gas ions with a Mg surface 惰性气体离子与镁表面碰撞的激发过程
Surface Science Letters Pub Date : 1993-09-20 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91012-D
S. Lacombe, L. Guillemot, M. Huels , T. Vu Ngoc, V.A. Esaulov
{"title":"Excitation processes in collisions of inert gas ions with a Mg surface","authors":"S. Lacombe,&nbsp;L. Guillemot,&nbsp;M. Huels ,&nbsp;T. Vu Ngoc,&nbsp;V.A. Esaulov","doi":"10.1016/0167-2584(93)91012-D","DOIUrl":"10.1016/0167-2584(93)91012-D","url":null,"abstract":"<div><p>Results of an angle resolved electron spectroscopy study of low keV inert gas ion collisions with a Mg surface are presented. Production of projectile autoionising states is demonstrated to exist not only for the previously known Ne case but also for He. The role of these states in ion production is commented. The characteristics of autoionising peak lineshapes are analysed and suggest a method of obtaining angular distributions of inelastically scattered ions.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 1","pages":"Pages L1011-L1016"},"PeriodicalIF":0.0,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91012-D","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"53713472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The photo-induced reaction of digermane with the Si(100)(2×1):D surface 二革曼与Si(100)(2×1):D表面的光诱导反应
Surface Science Letters Pub Date : 1993-09-20 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91023-H
Chiharu Isobe, Hee-Chuen Cho, John E. Crowell
{"title":"The photo-induced reaction of digermane with the Si(100)(2×1):D surface","authors":"Chiharu Isobe,&nbsp;Hee-Chuen Cho,&nbsp;John E. Crowell","doi":"10.1016/0167-2584(93)91023-H","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91023-H","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 1","pages":"Page A692"},"PeriodicalIF":0.0,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91023-H","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136940351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The photo-induced reaction of disilane with the Si(100) and Si(100)(2×1):D surfaces 二硅烷与Si(100)和Si(100)(2×1):D表面的光诱导反应
Surface Science Letters Pub Date : 1993-09-20 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91022-G
Chiharu Isobe, Hee-Chuen Cho, John E. Crowell
{"title":"The photo-induced reaction of disilane with the Si(100) and Si(100)(2×1):D surfaces","authors":"Chiharu Isobe,&nbsp;Hee-Chuen Cho,&nbsp;John E. Crowell","doi":"10.1016/0167-2584(93)91022-G","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91022-G","url":null,"abstract":"","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 1","pages":"Pages A691-A692"},"PeriodicalIF":0.0,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91022-G","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136940352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermally induced phase transition in the Cs/Al(111) system Cs/Al(111)体系的热诱导相变
Surface Science Letters Pub Date : 1993-09-20 Epub Date: 2003-01-03 DOI: 10.1016/0167-2584(93)91014-F
H. Kondoh, H. Nozoye
{"title":"Thermally induced phase transition in the Cs/Al(111) system","authors":"H. Kondoh,&nbsp;H. Nozoye","doi":"10.1016/0167-2584(93)91014-F","DOIUrl":"https://doi.org/10.1016/0167-2584(93)91014-F","url":null,"abstract":"<div><p>The adsorption of Cs on Al(111) has been studied by electron energy loss spectroscopy (EELS) and low energy electron diffraction (LEED). Two series of Cs overlayers with various coverages were prepared by two methods; as-deposition at 85 K (AD series) and thermally desorbing excess Cs (TD series). We find an abrupt change of EEL spectra for the TD series at a coverage of approximately 0.5; the nature of a Cs-induced loss peak changes from a surface plasmon to a Cs 6s → 6p like excitation, which is indicative of a metallic-to-ionic change. This transition is associated with a simultaneous structural transformation. Both EELS and LEED for the TD series are different from those for the AD series at the coverages between ca. 0.5 and 0.2. Irreversible structural and electronic transformations from the AD to the TD series also occur at these coverages by heating above 200 K without desorbing Cs. This indicates that the transformation is induced by a thermally activated process.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 1","pages":"Pages L1023-L1029"},"PeriodicalIF":0.0,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91014-F","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136940354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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