Figshare最新文献

筛选

英文中文

Engineering Silicon to Porous Silicon and SiliconnNanowires by Metal-Assisted Chemical Etching: Role of Ag Size andnElectron-Scavenging Rate on Morphology Control and Mechanism 金属辅助化学蚀刻工程硅到多孔硅和硅纳米线：银尺寸和电子清除率对形貌控制和机理的作用

Figshare Pub Date : 2017-08-15 DOI: 10.1021/acsomega.7b00584.s001

Kanakaraj Rajkumar (4356034), Ramanathaswamy Pandian (1339398), Amirthapandian Sankarakumar (4356037), Ramasamy Thangavelu RajendraKumar (4356040)

{"title":"Engineering Silicon to Porous Silicon and SiliconnNanowires by Metal-Assisted Chemical Etching: Role of Ag Size andnElectron-Scavenging Rate on Morphology Control and Mechanism","authors":"Kanakaraj Rajkumar (4356034), Ramanathaswamy Pandian (1339398), Amirthapandian Sankarakumar (4356037), Ramasamy Thangavelu RajendraKumar (4356040)","doi":"10.1021/acsomega.7b00584.s001","DOIUrl":"https://doi.org/10.1021/acsomega.7b00584.s001","url":null,"abstract":"We demonstrate controlled fabricationnof porous Si (PS) and vertically aligned silicon nanowires array startingnfrom bulk silicon wafer by simple chemical etching method, and thenunderlying mechanism of nanostructure formation is presented. Silicon-oxidationnrate and the electron-scavenging rate from metal catalysis play anvital role in determining the morphology of Si nanostructures. Thensize of Ag catalyst is found to influence the Si oxidation rate. Tunablenmorphologies from irregular porous to regular nanowire structure couldnbe tailored by controlling the size of Ag nanoparticles and H2O2 concentration. Ag nanoparticles of size aroundn30 nm resulted in irregular porous structures, whereas discontinuousnAg film yielded nanowire structures. The depth of the porous Si structuresnand the aspect ratio of Si nanowires depend on H2O2 concentration. For a fixed etching time, the depth of thenporous structures increases on increasing the H2O2 concentration. By varying the H2O2 concentration,nthe surface porosity and aspect ratio of the nanowires were controlled.nControlling the Ag catalyst size critically affects the morphologynof the etched Si nanostructures. H2O2 concentrationndecides the degree of porosity of porous silicon, dimensions and surfacenporosity of silicon nanowires, and etch depth. The mechanisms of thensize- and H2O2-concentration-dependent dissociationnof Ag and the formation of porous silicon and silicon nanowire arendescribed in detail.","PeriodicalId":522679,"journal":{"name":"Figshare","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147901559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0