Electronic Materials最新文献

Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 评估 p-GaN 栅 AlGaN/GaN 功率 HEMT 热电子退化的替代测量方法

Electronic Materials Pub Date : 2024-07-23 DOI: 10.3390/electronicmat5030009

M. Cioni, G. Giorgino, A. Chini, Antonino Parisi, G. Cappellini, C. Miccoli, M. E. Castagna, C. Tringali, F. Iucolano

引用次数: 0

Review on Power Cycling Reliability of SiC Power Device 碳化硅功率器件功率循环可靠性综述

Electronic Materials Pub Date : 2024-06-10 DOI: 10.3390/electronicmat5020007

Xu Gao, Qiang Jia, Yishu Wang, Hongqiang Zhang, Limin Ma, Guisheng Zou, Fu Guo

{"title":"Review on Power Cycling Reliability of SiC Power Device","authors":"Xu Gao, Qiang Jia, Yishu Wang, Hongqiang Zhang, Limin Ma, Guisheng Zou, Fu Guo","doi":"10.3390/electronicmat5020007","DOIUrl":"https://doi.org/10.3390/electronicmat5020007","url":null,"abstract":"The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141362740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode 取决于顶电极的双层 ZnO/HfO2 电阻式随机存取存储器的开关特性

Electronic Materials Pub Date : 2024-06-06 DOI: 10.3390/electronicmat5020006

So-Yeon Kwon, W. Ko, Jun-Ho Byun, Do-Yeon Lee, H. Lee, Ga-Won Lee

{"title":"The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode","authors":"So-Yeon Kwon, W. Ko, Jun-Ho Byun, Do-Yeon Lee, H. Lee, Ga-Won Lee","doi":"10.3390/electronicmat5020006","DOIUrl":"https://doi.org/10.3390/electronicmat5020006","url":null,"abstract":"In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆Gf°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO2 bilayer RRAM.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141380047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silver-Doped CsPbI2Br Perovskite Semiconductor Thin Films 掺银 CsPbI2Br 包晶石半导体薄膜

Electronic Materials Pub Date : 2024-05-13 DOI: 10.3390/electronicmat5020005

Tamiru Kebede, M. Abebe, Dhakshnamoorthy Mani, Aparna Thankappan, Sabu Thomas, Jung Yong Kim

{"title":"Silver-Doped CsPbI2Br Perovskite Semiconductor Thin Films","authors":"Tamiru Kebede, M. Abebe, Dhakshnamoorthy Mani, Aparna Thankappan, Sabu Thomas, Jung Yong Kim","doi":"10.3390/electronicmat5020005","DOIUrl":"https://doi.org/10.3390/electronicmat5020005","url":null,"abstract":"All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the silver doping concentration. For this purpose, we examined its bandgap tunability as a function of the silver doping by using density functional theory. Then, we studied the effect of silver on the structural and optical properties of CsPbI2Br. Resultantly, we found that ‘silver doping’ allowed for partial bandgap tunability from 1.91 eV to 2.05 eV, increasing the photoluminescence (PL) lifetime from 0.990 ns to 1.187 ns, and, finally, contributing to the structural stability when examining the aging effect via X-ray diffraction. Then, through the analysis of the intermolecular interactions based on the solubility parameter, we explain the solvent engineering process in relation to the solvent trapping phenomena in CsPbI2Br thin films. However, silver doping may induce a defect morphology (e.g., a pinhole) during the formation of the thin films.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140985494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution-Processable and Eco-Friendly Functionalization of Conductive Silver Nanoparticles Inks for Printable Electronics 用于可印刷电子产品的可溶液加工和环保型导电银纳米粒子功能化油墨

Electronic Materials Pub Date : 2024-04-16 DOI: 10.3390/electronicmat5020004

Sonia Ceron, David Barba, Miguel A. Dominguez

引用次数: 0

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing 增强 CdS 薄膜的光电特性：氮气吹扫和氮气退火的影响

Electronic Materials Pub Date : 2024-03-13 DOI: 10.3390/electronicmat5010003

Gayan K. L. Sankalpa, Gayan R. K. K. G. R. Kumarasinghe, B. Dassanayake, Gayan W. C. Kumarage

{"title":"Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing","authors":"Gayan K. L. Sankalpa, Gayan R. K. K. G. R. Kumarasinghe, B. Dassanayake, Gayan W. C. Kumarage","doi":"10.3390/electronicmat5010003","DOIUrl":"https://doi.org/10.3390/electronicmat5010003","url":null,"abstract":"The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140246163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays 交叉条存储器阵列中基于绝缘体金属过渡的选择器

Electronic Materials Pub Date : 2024-02-23 DOI: 10.3390/electronicmat5010002

Mahmoud Darwish, László Pohl

{"title":"Insulator Metal Transition-Based Selector in Crossbar Memory Arrays","authors":"Mahmoud Darwish, László Pohl","doi":"10.3390/electronicmat5010002","DOIUrl":"https://doi.org/10.3390/electronicmat5010002","url":null,"abstract":"This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140435848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanogranular Strontium Ferromolybdate/Strontium Molybdate Ceramics—A Magnetic Material Possessing a Natural Core-Shell Structure 纳米粒状锶铁钼酸盐/锶钼酸盐陶瓷--一种具有天然核壳结构的磁性材料

Electronic Materials Pub Date : 2024-01-31 DOI: 10.3390/electronicmat5010001

G. Suchaneck, E. Artiukh, N. Kalanda, M. Yarmolich, Gerald Gerlach

{"title":"Nanogranular Strontium Ferromolybdate/Strontium Molybdate Ceramics—A Magnetic Material Possessing a Natural Core-Shell Structure","authors":"G. Suchaneck, E. Artiukh, N. Kalanda, M. Yarmolich, Gerald Gerlach","doi":"10.3390/electronicmat5010001","DOIUrl":"https://doi.org/10.3390/electronicmat5010001","url":null,"abstract":"In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was modeled, yielding values suitable for magnetoresistive sensor applications. Such structures possess a narrow peak of magnetic flux sensibility located at about 80 mT. For magnetic flux measurement, single-domain granules with superparamagnetic behavior should be applied. The predicted TMR magnetic flux sensitivities for granules with superparamagnetic behavior amount to about 7.7% T−1 and 1.5% T−1 for granule sizes of 3 nm and 5 nm, respectively. A drawback of the tunnel magnetoresistance of such nanogranular core-shell ceramics is the unacceptably large value of the temperature coefficient. Acceptable values, lower than 2% K−1, are obtained only at low temperatures (less than 100 K) or large magnetic flux densities (exceeding 6 T). Therefore, a Wheatstone bridge configuration should be adopted for magnetoresistive sensor design to compensate for the effect of temperature.","PeriodicalId":512974,"journal":{"name":"Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140473579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0