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Photo-Detectors Based on Two Dimensional Materials 基于二维材料的光电探测器
Photodetectors [Working Title] Pub Date : 2021-05-10 DOI: 10.5772/INTECHOPEN.95559
M. A. Kharadi, G. Malik, F. A. Khanday
{"title":"Photo-Detectors Based on Two Dimensional Materials","authors":"M. A. Kharadi, G. Malik, F. A. Khanday","doi":"10.5772/INTECHOPEN.95559","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.95559","url":null,"abstract":"2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126055878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors 克服传统光电探测器中带宽与量子效率的权衡
Photodetectors [Working Title] Pub Date : 2019-05-29 DOI: 10.5772/INTECHOPEN.86506
T. Zhou, K. Chee
{"title":"Overcoming the Bandwidth-Quantum Efficiency Trade-Off in Conventional Photodetectors","authors":"T. Zhou, K. Chee","doi":"10.5772/INTECHOPEN.86506","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.86506","url":null,"abstract":"Optical systems and microwave photonics applications rely heavily on high-performance photodetectors having a high bandwidth-efficiency product. The main types of photodetector structures include Schottky and PIN-photodiodes, heterojunction phototransistors, avalanche photodetectors, and metal-semiconductor-metal photodetectors. Verticallyilluminated photodetectors intrinsically present bandwidth-efficiency limitations, but these have been mitigated by new innovations over the years in quantum well photodetectors, edge-coupled photodetectors and resonant-cavity enhanced photodetectors for improved photophysical characteristics. Edge-coupled ultra-high-speed photodetectors have yielded high conversion efficiencies, and the active device structure of resonantcavity-enhanced photodetectors allows wavelength selectivity and optical field enhancement due to resonance, enabling photodetectors to be made thinner and hence faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Single-photon avalanche diodes have been developed, which combine an ultimate sensitivity with excellent timing accuracy. Further advances in addressing the bandwidthquantum efficiency trade-off have incorporated photon-trapping nanostructures and plasmonic nanoparticles. Nanowire photodetectors have also demonstrated the highest photophysical performance to date.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"12 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133996720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion-Beam Modified Terahertz GaAs photoconductive antenna 离子束修饰的太赫兹砷化镓光导天线
Photodetectors [Working Title] Pub Date : 2019-01-12 DOI: 10.5772/INTECHOPEN.79693
Caiming Sun, Aidong Zhang
{"title":"Ion-Beam Modified Terahertz GaAs photoconductive antenna","authors":"Caiming Sun, Aidong Zhang","doi":"10.5772/INTECHOPEN.79693","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79693","url":null,"abstract":"Ion-implanted photoconductive GaAs terahertz (THz) antennas were demonstrated to deliver both high-efficiency and high-power THz emitters, which are attributed to excellent carrier acceleration and fast carrier trapping for THz generations by analyzing ultrafast carrier dynamics at subpicosecond scale. The implantation distance at over 2.5 μ m is deep enough to make defects (Ga vacancies, As þ Ga … , etc.) quite few; hence, a few with good mobility similar to bare GaAs ensures excellent carrier acceleration in shallow distance <1.0 μ m as photo carriers are generated by the pump laser. The implantation dosage is carefully optimized to make carrier trapping very fast, and screen effects by photo-generated carriers are significantly suppressed, which increases the THz radiation power of SI-GaAs antennas by two orders of magnitude. Under the same photo- excitation conditions (pump laser power, bias voltage), photocurrents from GaAs antennas with optimum conditions 300 keV, 5 (cid:2) 10 14 cm (cid:3) 2 for H implantation are decreased by two orders of magnitude; meanwhile, the THz radiation is enhanced by over four times, which means that the electrical-to-THz power conversion efficiency is improved by a factor of over 1600.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124741769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single-Pixel Imaging Using Photodiodes 使用光电二极管的单像素成像
Photodetectors [Working Title] Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.79734
Y. Jauregui-Sánchez, P. Clemente, P. Latorre-Carmona, J. Lancis, E. Tajahuerce
{"title":"Single-Pixel Imaging Using Photodiodes","authors":"Y. Jauregui-Sánchez, P. Clemente, P. Latorre-Carmona, J. Lancis, E. Tajahuerce","doi":"10.5772/INTECHOPEN.79734","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79734","url":null,"abstract":"Single-pixel cameras (SPCs) have been successfully used in different imaging applications during the last decade. In these techniques, the scene is illuminated with a sequence of microstructured light patterns codified onto a programmable spatial light modulator. The light coming from the scene is collected by a bucket detector, such as a photodiode. The image is recovered computationally from the photodiode electric signal. In this context, the signal quality is of capital value. One factor that degrades the signal quality is the noise, in particular, the photocurrent, the dark-current, and the thermal noise sources. In this chapter, we develop a numerical model of a SPC based on a photodiode, which considers the characteristics of the incident light, as well as the photodiode specifications. This model includes the abovementioned noise sources and infers the signal-to-noise ratio (SNR) of the SPCs in different contexts. In particular, we study the SNR as a function of the optical power of the incident light, the wavelength, and the photodiode temperature. The results of the model are compared with those obtained experimentally with a SPC.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"202 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120859397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
a-Si:H p-i-n Photodiode as a Biosensor a- si:H -i-n光电二极管作为生物传感器
Photodetectors [Working Title] Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.80503
V. Gradisnik, Darko Gumbarević
{"title":"a-Si:H p-i-n Photodiode as a Biosensor","authors":"V. Gradisnik, Darko Gumbarević","doi":"10.5772/INTECHOPEN.80503","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.80503","url":null,"abstract":"The p-i-n a-Si:H photodiode is a promising device as a transducer in biosensors. The native and light-induced localized state density and energy distribution in the energy gap of a-Si:H have a large effect on the photoconductivity of thin-film photodiodes. Depending on their nature, they play a crucial role in trapping and recombination processes and consequently influence the photodiode capacitance. The optical bias depen- dence of modulated photocurrent, OBMPC, method using the blue LED light is applied to clarify the nature and energy distribution of the energy gap density of states and their influence on the photodiode capacitance, from photodiodes transient response. It is observed that the deep defect states of the i-layer contribute to the capacitance at various bias voltages. Also, the capacitance achieves the upper limit around the built-in potential. Based on this method and obtained results, the a-Si:H p-i-n photodiode is used as a bio- sensor transducer in the detection of mammalian cell chemiluminescence.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126516547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Avalanche Photodiode Focal Plane Arrays and Their Application to Laser Detection and Ranging 雪崩光电二极管焦平面阵列及其在激光探测测距中的应用
Photodetectors [Working Title] Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.81294
Haizhi Song
{"title":"Avalanche Photodiode Focal Plane Arrays and Their Application to Laser Detection and Ranging","authors":"Haizhi Song","doi":"10.5772/INTECHOPEN.81294","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.81294","url":null,"abstract":"Focal-plane avalanche photodiodes (APDs) are being more and more widely and deeply studied to satisfy the requirement in weak light and single photon imaging. The progresses of this worldwide study, especially the distinctive researches and achieve- ments in Southwest Institute of Technical Physics and University of Electronic Science and Technology of China are reviewed in this chapter. We successfully fabricated up to 64 × 1 linear-mode Si APD arrays, and 32 × 32–64 × 64 Si single-photon avalanche detector (SPAD) arrays, and applied them in Laser Detection and Ranging (LADAR) platforms like driverless vehicles. Also, we developed 32 × 32–64 × 64 InGaAsP/InP SPAD arrays, and constructed three-dimensional imaging LADAR using them. Together with the progresses of other groups and other materials, we see a prospective future for the development and application of focal-plane APDs.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126914610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Photoconductive Interlocked Molecules and Macromolecules 光导联锁分子和大分子
Photodetectors [Working Title] Pub Date : 2018-11-05 DOI: 10.5772/INTECHOPEN.79798
Raffaello Papadakis, I. Deligkiozi, Hu Li
{"title":"Photoconductive Interlocked Molecules and Macromolecules","authors":"Raffaello Papadakis, I. Deligkiozi, Hu Li","doi":"10.5772/INTECHOPEN.79798","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79798","url":null,"abstract":"Organic compounds and materials with photoconductive properties have been studied for many years because of their importance in many technological applications such as dye-sensitized solar cells, photodiodes, photoresistors, electronics, biomolecular sensing, etc. For multiple purposes, such molecules require intense protection from various factors which can decrease their durability and cause fatigue. Interlocked molecules and macro- molecules involving photoconductive organic components and various types of macrocycles, such as cyclodextrins, cyclophanes, or macrocyclic ethers, are promising candidates for new photoconductivity-related applications. In this chapter, a review in this emerging research area in materials science and technology is provided. Focus is placed on photoconductive (poly)rotaxanes and (poly)catenanes. Various types of such materials and compounds are reviewed, and recent examples are provided. The relation between their structure and photoconductive behavior is discussed.","PeriodicalId":413168,"journal":{"name":"Photodetectors [Working Title]","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130884884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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