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Band structure of strained Si/(111)Si 1- x Ge x : a first principles investigation 应变Si/(111)Si 1- x Ge x的能带结构:第一性原理研究
Research & Progress of SSE Solid State Electronics Pub Date : 2008-09-20 DOI: 10.7498/aps.57.5918
Song Jianjun, Zhang Heming, Dai Xianying, Hu Huiyong, Xuan Rong-xi
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引用次数: 13
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