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IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials最新文献

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A Generic InP-based Photonic Integration Technology 基于inp的通用光子集成技术
IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Pub Date : 2011-05-22 DOI: 10.1109/OECC.2012.6276483
H. Ambrosius, X. Leijtens, T. de Vries, J. Bolk, E. Smalbrugge, M. Smit
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引用次数: 5
High-speed directly-modulated lasers with photon-photon resonance 具有光子-光子共振的高速直接调制激光器
IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Pub Date : 2011-05-22 DOI: 10.1364/NFOEC.2013.JW2A.33
M. Dumitrescu, A. Laakso, J. Viheriala, M. Kamp, P. Melanen, P. Uusimaa
{"title":"High-speed directly-modulated lasers with photon-photon resonance","authors":"M. Dumitrescu, A. Laakso, J. Viheriala, M. Kamp, P. Melanen, P. Uusimaa","doi":"10.1364/NFOEC.2013.JW2A.33","DOIUrl":"https://doi.org/10.1364/NFOEC.2013.JW2A.33","url":null,"abstract":"The epitaxial overgrowth, employed in the fabrication of conventional buried gratings, is avoided by using lateral corrugations of the ridge-waveguide as surface gratings, thus decreasing the fabrication complexity, increasing the yield and reducing the fabrication cost of distributed feedback and distributed Bragg reflector edge-emitting lasers. Single-and multiple-contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 µm are presented, including photon-photon-resonance-extended small-signal modulation bandwidth in excess of 20 GHz achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter lengths are expected to exceed 40 GHz small-signal modulation bandwidth under direct modulation.","PeriodicalId":371480,"journal":{"name":"IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115851516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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