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International Journal of Power Management Electronics最新文献

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High-Temperature SOI/SiC-Based DC-DC Converter Suite 高温SOI/SiC-Based DC-DC转换器套件
International Journal of Power Management Electronics Pub Date : 2008-08-25 DOI: 10.1155/2008/520580
B. Reese, B. Mcpherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter
{"title":"High-Temperature SOI/SiC-Based DC-DC Converter Suite","authors":"B. Reese, B. Mcpherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter","doi":"10.1155/2008/520580","DOIUrl":"https://doi.org/10.1155/2008/520580","url":null,"abstract":"A complete design strategy (mechanical and electrical) for a 25 W 28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The converter includes a high-temperature SOI-based PWM controller featuring 150 kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high-side gate driver. Several passive technologies were investigated for both control and power sections. Capacitor technologies were characterized over temperature and over time at 300, power inductors designed and tested up to 350, and power transformers designed and tested up to 500. Northrop Grumman normally-off SiC JFETs were used as power switches and were characterized up to 250. Efficiency and mass optimization routines were developed with the data gained from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results of the first prototype module are presented, with operation from 25 up to an ambient temperature of 240 .","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132348621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On-Chip Bondwire Magnetics with Ferrite-Epoxy Glob Coating for Power Systems on Chip 片上电力系统用铁氧体环氧涂层片上键合线磁性材料
International Journal of Power Management Electronics Pub Date : 2008-07-16 DOI: 10.1155/2008/678415
Jian Lu, H. Jia, A. Arias, X. Gong, Z. Shen
{"title":"On-Chip Bondwire Magnetics with Ferrite-Epoxy Glob Coating for Power Systems on Chip","authors":"Jian Lu, H. Jia, A. Arias, X. Gong, Z. Shen","doi":"10.1155/2008/678415","DOIUrl":"https://doi.org/10.1155/2008/678415","url":null,"abstract":"A novel concept of on-chip bondwire inductors and transformers with ferrite epoxy glob coating is proposed to offer a cost effective approach realizing power systems on chip (SOC). We have investigated the concept both experimentally and with finite element modeling. A <path id=\"x1D444\" d=\"M745 361q0 -134 -83.5 -233t-214.5 -130l16 -11q97 -67 250 -132l-8 -23q-76 3 -131 16q-81 19 -242 125l-20 13q-129 8 -209 91t-80 208q0 160 116 271t289 111q136 0 226.5 -83t90.5 -223zM645 356q0 127 -57.5 201.5t-169.5 74.5q-126 0 -210.5 -104.5t-84.5 -248.5\u0000q0 -97 46 -166.5t129 -87.5l84 15l29 -19q104 21 169 121.5t65 213.5z\"> factor of 30–40 is experimentally demonstrated for the bondwire inductors which represents an improvement by a factor of 3–30 over the state-of-the-art MEMS micromachined inductors. Transformer parameters including self- and mutual inductance and coupling factors are extracted from both modeled and measured <path id=\"x1D446\" d=\"M457 488l-30 -3q-17 148 -131 148q-53 0 -84.5 -34.5t-31.5 -82.5q0 -42 25.5 -72t74.5 -62l33 -22q63 -42 95 -85t32 -102q0 -84 -67 -137t-163 -53q-58 0 -113 22t-70 43l-4 152l27 4q4 -32 15 -62.5t31 -59.5t53.5 -47t76.5 -18q56 0 92 35t36 96q0 39 -25 70t-78 68\u0000l-31 22q-32 23 -53.5 41.5t-45 57t-23.5 77.5q0 82 58 132.5t156 50.5q46 0 101 -17l18.5 -6t17 -6t8.5 -3q-4 -55 0 -147z\"> -parameters. More importantly, the bondwire magnetic components can be easily integrated into SOC manufacturing processes with minimal changes and open enormous possibilities for realizing cost-effective, high-current, high-efficiency power SOCs.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"13 18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126976741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Silicon Carbide Emitter Turn-Off Thyristor 碳化硅发射极关断晶闸管
International Journal of Power Management Electronics Pub Date : 2008-07-01 DOI: 10.1155/2008/891027
Jun Wang, Gangyao Wang, Jun Li, A. Huang, J. Melcher, S. Atcitty
{"title":"Silicon Carbide Emitter Turn-Off Thyristor","authors":"Jun Wang, Gangyao Wang, Jun Li, A. Huang, J. Melcher, S. Atcitty","doi":"10.1155/2008/891027","DOIUrl":"https://doi.org/10.1155/2008/891027","url":null,"abstract":"A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  <path id=\"x63\" d=\"M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12\u0000t60.5 43z\"> <path id=\"x6D\" d=\"M797 0h-214v26q46 5 58 17.5t12 63.5v167q0 116 -88 116q-48 0 -112 -52q3 -18 3 -42v-195q0 -46 11 -58t53 -17v-26h-214v26q48 5 59.5 17t11.5 60v172q0 115 -88 115q-47 0 -109 -52v-235q0 -47 10 -59.5t48 -17.5v-26h-211v26q50 5 62.5 17t12.5 60v207q0 48 -9 59.5\u0000t-52 18.5v23q79 14 139 41v-81q3 2 29 20.5t44 29.5q45 28 81 28t66 -22t46 -61q25 20 83 57q39 26 76 26q59 0 93 -40t34 -113v-193q0 -49 10.5 -60.5t54.5 -16.5v-26z\"> current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a \u00009.56-A load current, the SiC ETO shows a fast turn-off time of \u00001.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  conduction and the 100  turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than \u00004.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage \u0000(>5 kV) and higher frequency (10 kHz) are needed.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A Novel Soft-Switching Synchronous Buck Converter for Portable Applications 一种便携式软开关同步降压变换器
International Journal of Power Management Electronics Pub Date : 2008-02-13 DOI: 10.1155/2008/862510
A. Panda, S. Pattnaik, K. K. Mohapatra
{"title":"A Novel Soft-Switching Synchronous Buck Converter for Portable Applications","authors":"A. Panda, S. Pattnaik, K. K. Mohapatra","doi":"10.1155/2008/862510","DOIUrl":"https://doi.org/10.1155/2008/862510","url":null,"abstract":"This paper proposes a zero-voltage-transition (ZVT) pulse-width-modulated (PWM) synchronous buck converter, which is designed to operate at low voltage and high efficiency typically required for portable systems. A new passive auxiliary circuit that allows the main switch to operate with zero-voltage switching has been incorporated in the conventional PWM synchronous buck converter. The operation principles and a detailed steady-state analysis of the ZVT-PWM synchronous converter implemented with the auxiliary circuit are presented. Besides, the main switch and all of the semiconductor devices operate under soft-switching conditions. Thus, the auxiliary circuit provides a larger overall efficiency. The feasibility of the auxiliary circuit is confirmed by simulation and experimental results.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122207169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Performance analysis of trench power MOSFETs in high-frequency synchronous buck converter applications 沟槽功率mosfet在高频同步降压变换器中的性能分析
International Journal of Power Management Electronics Pub Date : 1900-01-01 DOI: 10.1155/2008/412175
Y. Xiong, Xu Cheng, Xiangcheng Wang, Pavan Kumar, Lina Guo, Z. Shen
{"title":"Performance analysis of trench power MOSFETs in high-frequency synchronous buck converter applications","authors":"Y. Xiong, Xu Cheng, Xiangcheng Wang, Pavan Kumar, Lina Guo, Z. Shen","doi":"10.1155/2008/412175","DOIUrl":"https://doi.org/10.1155/2008/412175","url":null,"abstract":"This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range. Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The RDS(ON) × QG figure of merit (FOM) still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2MHz and 65% at 5MHz even with the most advanced trench MOSFET technologies.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134505836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Large area silicon carbide vertical JFETs for 1200 V cascode switch operation 用于1200 V级联开关操作的大面积碳化硅垂直jfet
International Journal of Power Management Electronics Pub Date : 1900-01-01 DOI: 10.1155/2008/523721
V. Veliadis, T. McNutt, M. Snook, H. Hearne, P. Potyraj, J. Junghans, C. Scozzie
{"title":"Large area silicon carbide vertical JFETs for 1200 V cascode switch operation","authors":"V. Veliadis, T. McNutt, M. Snook, H. Hearne, P. Potyraj, J. Junghans, C. Scozzie","doi":"10.1155/2008/523721","DOIUrl":"https://doi.org/10.1155/2008/523721","url":null,"abstract":"SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at 300°C. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2V and a specific onstate resistance of 5.4mΩcm2. The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15mΩcm2. The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133022362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Improved switching characteristics of fast power MOSFETs applying solder bump technology 采用凸焊技术改善快速功率mosfet的开关特性
International Journal of Power Management Electronics Pub Date : 1900-01-01 DOI: 10.1155/2008/675173
S. Dieckerhoff, T. Wernicke, C. Kallmayer, S. Guttowski, H. Reichl
{"title":"Improved switching characteristics of fast power MOSFETs applying solder bump technology","authors":"S. Dieckerhoff, T. Wernicke, C. Kallmayer, S. Guttowski, H. Reichl","doi":"10.1155/2008/675173","DOIUrl":"https://doi.org/10.1155/2008/675173","url":null,"abstract":"The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.","PeriodicalId":301342,"journal":{"name":"International Journal of Power Management Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122354802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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