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Highly Integrated Gate Drivers for Si and GaN Power Transistors最新文献

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Gate Drivers Based on High-Voltage Charge Storing (HVCS) 基于高压电荷存储的栅极驱动器
Highly Integrated Gate Drivers for Si and GaN Power Transistors Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-68940-7_3
A. Seidel, B. Wicht
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引用次数: 0
Conclusion 结论
Highly Integrated Gate Drivers for Si and GaN Power Transistors Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-68940-7_7
A. Seidel, Bernhard Wicht
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引用次数: 0
Gate Drivers Based on High-Voltage Energy Storing (HVES) 基于高压储能的栅极驱动器
Highly Integrated Gate Drivers for Si and GaN Power Transistors Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-68940-7_4
A. Seidel, B. Wicht
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引用次数: 0
Fundamentals 基本面
Highly Integrated Gate Drivers for Si and GaN Power Transistors Pub Date : 1900-01-01 DOI: 10.1002/9781119540328.part1
A. Seidel, Bernhard Wicht
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引用次数: 0
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