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Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors. 时间相关介质击穿的初始阶段:Si/SiO2晶体管中高场栅极应力产生的原子尺度缺陷。
Proposed for presentation at the 2021 AVS in , . Pub Date : 2021-10-01 DOI: 10.2172/1891743
S. Moxim, F. Sharov, D. Hughart, G. Haase, P. Lenahan
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