Journal of Optoelectronics·laser最新文献

Routing control and performance test of silicon-based photonic switching chip 硅基光子开关芯片的路由控制与性能测试

Journal of Optoelectronics·laser Pub Date : 2017-09-15 DOI: 10.16136/J.JOEL.2017.09.0042

M. Liao, Baojian Wu, Wei Huang, K. Qiu

引用次数: 0

Effect of O_2 content on optical and electrical properties of Si/NiO:Na pn heterojunction O_2含量对Si/NiO:Na pn异质结光电性能的影响

Journal of Optoelectronics·laser Pub Date : 2015-02-15 DOI: 10.16136/J.JOEL.2015.02.0845

Tong Li, T. Wang, Da Fu Wang, X. Ni, Xinwei Zhao

{"title":"Effect of O_2 content on optical and electrical properties of Si/NiO:Na pn heterojunction","authors":"Tong Li, T. Wang, Da Fu Wang, X. Ni, Xinwei Zhao","doi":"10.16136/J.JOEL.2015.02.0845","DOIUrl":"https://doi.org/10.16136/J.JOEL.2015.02.0845","url":null,"abstract":"In the present study,we have fabricated a heterojunction Si/NiO:Na diode by magnetron sputtering method.The X-ray diffraction(XRD)results show that only one diffraction peak appears for NiO:Na films on Si substrates,which is corresponding to(111)NiO:Na preferred orientation and indicates that NiO:Na belongs to cubic structure.When O2/Ar+O2ratio changes from 0%to 30%,there is no obvious change about(111)diffraction peak position,but the(111)peak intensity has been improved greatly,which means that the introduction of oxygen is benefit for the NiO:Na film crystallization.When further increasing O2/Ar+O2ratio to 60%,the(111)peak shifts to left,indicating that c axis distance increases.This phenomenon can be explained that Ni depletion or oxygen vacancies may be complemented through introducing oxygen atmosphere.The(111)peak reversely shifts to larger diffraction angle when sputtering NiO:Na film in pure oxygen atmosphere,which may result from the excessive oxygen defects.From I-V curves,the electrical properties show that when changing O2/Ar+O2ratio from 0%to 30%,Si/NiO:Na heterojunction shows the best rectifying property,where its Vocis 4.9Vand the leakage current appears until the negative voltage reaches-7V.It may be explained by that the crystallization of NiO:Na thin films has been improved and their defects decrease.When further increasing O2/Ar+O2ratio,both the crystallization qualities and rectifying properties of NiO:Na thin films are weakened.Considering the results of XRD,atomic force microscope(AFM),UV and I-Vcharacteristics,it can be concluded that the partial introduction of oxygen atmosphere is beneficial to the crystal structure and reduces the crystal defect,causing the improvement of the electrical properties of Si/NiO:Na pn junctions.","PeriodicalId":207962,"journal":{"name":"Journal of Optoelectronics·laser","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131487963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Domain structure inversion characterization of near stoichiometric lithium tantalate 近化学计量量钽酸锂畴结构反演表征

Journal of Optoelectronics·laser Pub Date : 2008-09-20 DOI: 10.7498/aps.57.5670

Jia Baoshen, Zhao Ye-quan, Z. Xue-feng, Shen Yan, He Yan-lan

引用次数: 1

Experimental fabrication of add/drop filters using a Bragg grating-assisted mismatched coupler 用布拉格光栅辅助不匹配耦合器实验制备加/降滤波器

Journal of Optoelectronics·laser Pub Date : 1900-01-01 DOI: 10.1364/acp.2009.wc4

Jian Shui-sheng

引用次数: 0

Study on the influence of polarization characteristics of light on rPPG signal 光偏振特性对rPPG信号影响的研究

Journal of Optoelectronics·laser Pub Date : 1900-01-01 DOI: 10.16136/J.JOEL.2021.01.0284

Chunqiu Tang, S. Liu, Hong Li, E. Li

引用次数: 0

Research on forward-biased Si-LED arrays with low operating voltage and high conversion efficiency based on standard CMOS process 基于标准CMOS工艺的低工作电压、高转换效率正向偏置Si-LED阵列研究

Journal of Optoelectronics·laser Pub Date : 1900-01-01 DOI: 10.16136/J.JOEL.2015.06.0093

Xie Sheng, Mao Luhong, Cui Meng, Guo Weilian, Wu Lei, Xie Rong, Zhang Shilin

{"title":"Research on forward-biased Si-LED arrays with low operating voltage and high conversion efficiency based on standard CMOS process","authors":"Xie Sheng, Mao Luhong, Cui Meng, Guo Weilian, Wu Lei, Xie Rong, Zhang Shilin","doi":"10.16136/J.JOEL.2015.06.0093","DOIUrl":"https://doi.org/10.16136/J.JOEL.2015.06.0093","url":null,"abstract":"Optical interconnection has been studied to replace electronic interconnection because of its significant performance advantages,such as high speed and low crosstalk.Silicon based light emitting device(Si-LED)with low operating voltage and high conversion efficiency is the key to realizing optical interconnection.Based on the n+source/drain region of standard CMOS technology,this work designs and fabricates an Si-LED array with wedge-shaped n+pn+configuration in the commercial standard 0.18μm1P6MCMOS process offered by United Microelectronic Corporation(UMC)without any modification.The measurement results indicate that the designed Si-LED can operate properly between 0.9Vand1.5V,which is compatible with the power supply of CMOS integrated circuits.When the device is forward-biased,the light emitting spectrum of the Si-LED has a peak at about 1100 nm.An optical power of1 800 nW is obtained at a forward current of 390 mA,and the power conversion efficiency is 3.5×10-6.Due to the features of low operating voltage and high optical power,our Si-LED can be monolithically integrated with the CMOS circuits,and has a potential application in the field of optical interconnections.","PeriodicalId":207962,"journal":{"name":"Journal of Optoelectronics·laser","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114560758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Image segmentation method based on fuzzy entropy and grey relational analysis 基于模糊熵和灰色关联分析的图像分割方法

Journal of Optoelectronics·laser Pub Date : 1900-01-01 DOI: 10.1109/icig.2007.108

Zhang Gong

引用次数: 0