Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]最新文献

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Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors 下一代光电探测器的iii族氮化物及其杂化结构

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title] Pub Date : 2021-07-15 DOI: 10.5772/INTECHOPEN.95389

D. Singh, B. Roul, K. Nanda, S. .. Krupanidhi

{"title":"Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors","authors":"D. Singh, B. Roul, K. Nanda, S. .. Krupanidhi","doi":"10.5772/INTECHOPEN.95389","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.95389","url":null,"abstract":"In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.","PeriodicalId":189325,"journal":{"name":"Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]","volume":"07 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116701046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Conducting Polymer-Based Emissive Layer on Efficiency of OLEDs 导电聚合物基发光层对oled效率的影响

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title] Pub Date : 2021-06-23 DOI: 10.5772/intechopen.98652

D. Nayak, R. Choudhary

引用次数: 0

Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials 基于二维材料的近红外肖特基硅光电探测器

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title] Pub Date : 2021-04-22 DOI: 10.5772/intechopen.99625

T. Crisci, L. Moretti, M. Gioffré, M. Casalino

{"title":"Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials","authors":"T. Crisci, L. Moretti, M. Gioffré, M. Casalino","doi":"10.5772/intechopen.99625","DOIUrl":"https://doi.org/10.5772/intechopen.99625","url":null,"abstract":"Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.","PeriodicalId":189325,"journal":{"name":"Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134454811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0