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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)最新文献

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A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters 提出了一种利用s参数提取MOSFET有效通道长度的新方法
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI: 10.1109/HKEDM.2000.904215
Seonghearn Lee
{"title":"A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters","authors":"Seonghearn Lee","doi":"10.1109/HKEDM.2000.904215","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904215","url":null,"abstract":"A simple and accurate extraction of the effective channel length is carried out by utilizing the slope information of the the intrinsic gate-to-channel capacitance versus the mask gate length of ultra short-channel devices. The measurement setup where the gate is connected to a RF signal is used to remove the discrepancy problem between conventional I-V and C-V methods. In order to increase the measurement accuracy, the intrinsic gate-to-channel capacitance data are determined by calibrating S-parameter sets measured at GHz using zero-bias data, instead of low-frequency C-V measurements. Contrary to the conventional C-V method, this new RF C-V method results in much smaller deviation from the I-V method.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123192835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A single QWL SPICE model based on three-level rate equations 基于三能级速率方程的单QWL SPICE模型
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI: 10.1109/HKEDM.2000.904233
Lifeng Chen, Lilin Lian
{"title":"A single QWL SPICE model based on three-level rate equations","authors":"Lifeng Chen, Lilin Lian","doi":"10.1109/HKEDM.2000.904233","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904233","url":null,"abstract":"An equivalent circuit model of a quantum-well laser is given based on the three-level rate equations. Thermal emission effects and parasitic effects are considered, and an expression for optical gain factor is presented, it is shown that, based on simulation using PSPICE program, the small-signal frequency response agrees well with experimental data. The characteristics of large-signal modulation are also developed and predicted.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129065401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Measurement of Young's modulus of nickel silicide film by a surface profiler 用表面轮廓仪测量硅化镍薄膜的杨氏模量
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI: 10.1109/HKEDM.2000.904217
M. Qin, C. Y. Yuen, M. Poon, W. Y. Chan
{"title":"Measurement of Young's modulus of nickel silicide film by a surface profiler","authors":"M. Qin, C. Y. Yuen, M. Poon, W. Y. Chan","doi":"10.1109/HKEDM.2000.904217","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904217","url":null,"abstract":"Young's modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson's ratio and the boundary of the structure, Si/sub 3/N/sub 4/ film with a Young's modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350/spl deg/C has a Young's modulus of 132 GPa, which is lower than that that of normal grown polysilicon (/spl sim/160 Gpa) and Si/sub 3/N/sub 4/. It means that the NiSi is a promising structure material for MEMS application.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130373915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric 用Ta/sub 2/O/sub 5/栅极介质制备的金属氧化物半导体场效应晶体管的负跨导效应
Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI: 10.1109/HKEDM.2000.904206
B. Lai, J.Y. Lee
{"title":"Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric","authors":"B. Lai, J.Y. Lee","doi":"10.1109/HKEDM.2000.904206","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904206","url":null,"abstract":"N-channel metal oxide semiconductor field effect transistors with Ta/sub 2/O/sub 5/ gate dielectric were fabricated. An intrinsic Ta/sub 2/O/sub 5//silicon barrier height of 0.51 eV was extracted from the gate current. The effective Ta/sub 2/O/sub 5//silicon barrier height including image force barrier lowering is about 0.37 eV with drain to source voltage V/sub DS/ ranging from 1.5 V to 4.0 V. Due to the low barrier height, negative transconductance effect was observed in the linear region. The decrease of drain current is due to the real space transfer of electrons from the drain terminal to the gate electrode.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116719106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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