发布求助
文献互助 智能选刊 最新文献

Nitride Semiconductor Technology最新文献

筛选
英文 中文
Index 指数
Nitride Semiconductor Technology Pub Date : 2020-08-03 DOI: 10.1002/9783527825264.index
{"title":"Index","authors":"","doi":"10.1002/9783527825264.index","DOIUrl":"https://doi.org/10.1002/9783527825264.index","url":null,"abstract":"","PeriodicalId":169665,"journal":{"name":"Nitride Semiconductor Technology","volume":"63 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114430048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light‐Emitting Diodes 光发射二极管应承担的
Nitride Semiconductor Technology Pub Date : 2020-08-03 DOI: 10.1002/9783527825264.ch7
A. Yadav, H. Hirayama, E. Rafailov
{"title":"Light‐Emitting Diodes","authors":"A. Yadav, H. Hirayama, E. Rafailov","doi":"10.1002/9783527825264.ch7","DOIUrl":"https://doi.org/10.1002/9783527825264.ch7","url":null,"abstract":"","PeriodicalId":169665,"journal":{"name":"Nitride Semiconductor Technology","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131966755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Introduction to Gallium Nitride Properties and Applications 氮化镓性质及应用简介
Nitride Semiconductor Technology Pub Date : 2020-08-03 DOI: 10.1002/9783527825264.ch1
F. Roccaforte, M. Leszczynski
{"title":"Introduction to Gallium Nitride Properties and Applications","authors":"F. Roccaforte, M. Leszczynski","doi":"10.1002/9783527825264.ch1","DOIUrl":"https://doi.org/10.1002/9783527825264.ch1","url":null,"abstract":"popular foreign substrates: sapphire (Al 2 O 3 ), silicon (Si), and silicon carbide (SiC).","PeriodicalId":169665,"journal":{"name":"Nitride Semiconductor Technology","volume":"293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132791796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信