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Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications最新文献

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Main Differences in Processing Si and SiC Devices 加工Si和SiC器件的主要区别
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.76293
Fan Li, M. Jennings
{"title":"Main Differences in Processing Si and SiC Devices","authors":"Fan Li, M. Jennings","doi":"10.5772/INTECHOPEN.76293","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76293","url":null,"abstract":"Due to the different physical properties of Si and SiC, many conventional Si device processing techniques cannot be directly transferred to SiC device fabrication. To deliver high-performance SiC commercial power devices, new techniques quite different from Si industry were developed in past decades for processing device, such as dopant implantation, metal contact, MOS interface, etc. On the other hand, the physics model behind many of these SiC processing technologies is not updated in the same pace that the success of them can still not be fully understood.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129306339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry 导论:电力电子对SiC器件的需求——电力工业新时代的开始
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.79487
Yogesh Sharma
{"title":"Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry","authors":"Yogesh Sharma","doi":"10.5772/INTECHOPEN.79487","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79487","url":null,"abstract":"© 2016 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Introductory Chapter: Need of SiC Devices in Po er Electronics A Beginning of New Era in Power Industry","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124167682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Status of SiC Products and Technology 碳化硅产品与技术现状
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.76061
A. Bhalla
{"title":"Status of SiC Products and Technology","authors":"A. Bhalla","doi":"10.5772/INTECHOPEN.76061","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76061","url":null,"abstract":"The benefits of silicon carbide (SiC) devices for use in power electronics are driven by fundamental material benefits of high breakdown field and thermal conductivity, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point. It takes the confluence of many separate developments to drive largescale adoption, which we will examine in this chapter.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"52 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121004269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules 宽带隙半导体模块的高性能封装技术
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.78765
P. Mumby-Croft, Daohui Li, X. Dai, Guoyou Liu
{"title":"High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules","authors":"P. Mumby-Croft, Daohui Li, X. Dai, Guoyou Liu","doi":"10.5772/INTECHOPEN.78765","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.78765","url":null,"abstract":"The properties of wide band gap (WBG) semiconductors are beneficial to power elec - tronics applications ranging from consumer electronics and renewable energy to elec tric vehicles and high-power traction applications like high-speed trains. WBG devices, properly integrated, will allow power electronics systems to be smaller, lighter, operate at higher temperatures, and at higher frequencies than previous generations of Si-based systems. These will contribute to higher efficiency, and therefore, lower lifecycle costs and lower CO 2 emissions. Over 20 years have been spent developing WBG materials, low-defect-density wafers, epitaxy, and device fabrication and processing technology. In power electronics applications, devices are normally packaged into large integrated modules with electrical, mechanical and thermal connection to the system and control circuit. The first generations of WBG device have used conventional or existing module designs to allow drop-in replacement of Si devices; this approach limits the potential benefit. To realize the full potential of WBG devices, especially the higher operating tem - peratures and faster switching frequency, a new generation of packaging design and technology concepts must be widely implemented.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130166291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN-Based Schottky Diode gan基肖特基二极管
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.77024
Yaqi Wang
{"title":"GaN-Based Schottky Diode","authors":"Yaqi Wang","doi":"10.5772/INTECHOPEN.77024","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.77024","url":null,"abstract":"Schottky diode, also known as Schottky barrier diode (SBD), fabricated on GaN and related III-Nitride materials has been researched intensively and extensively for the past two decades. This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability. The chapter also discusses about the GaN lateral, quasi-vertical and vertical SBDs, and AlGaN/GaN field effect SBDs: the evolution of the epitaxial structure, processing techniques and device structure. The chapter closes with challenges ahead and gives an outlook on the future development of the GaN SBDs.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122510077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors 宽带隙功率半导体的TCAD器件建模与仿真
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-09-12 DOI: 10.5772/INTECHOPEN.76062
N. Lophitis, A. Arvanitopoulos, S. Perkins, M. Antoniou
{"title":"TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors","authors":"N. Lophitis, A. Arvanitopoulos, S. Perkins, M. Antoniou","doi":"10.5772/INTECHOPEN.76062","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76062","url":null,"abstract":"Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools were originally developed for silicon and their performance and accuracy for wide bandgap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide bandgap power semiconductors. In particular, modelling and simulating 3Cand 4H-Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analyzed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114700990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors 基于氮化镓功率晶体管的电动汽车感应功率传输
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications Pub Date : 2018-04-05 DOI: 10.5772/INTECHOPEN.76057
Caitlyn Aaron, S. Liter
{"title":"Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors","authors":"Caitlyn Aaron, S. Liter","doi":"10.5772/INTECHOPEN.76057","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.76057","url":null,"abstract":"This chapter will present the application of the GaN Gate Injection Transistor (GIT) in Inductive Power Transfer (IPT) for Electric Vehicles (EV). IPT provides significant benefits over conventional plug-in chargers but suffers from lower efficiency. A high frequency inverter using GaN GIT, which has low on-resistance and gate charge, is implemented to reduce switching and conduction loss, resulting in higher efficiency. Different gate drive strategies will be compared for driving the GaN GIT at high slew rates while ensuring cross-conduction protection. The switching characteristics of the GaN GIT are studied and the inverter is designed to ensure low switching losses, while keeping overshoot and slew rates under control. Experiment results presented will demonstrate that the system efficiency peaks at 95% at 100 kHz operation and 92% at 250 kHz operation for a coil gap of 80 mm at 2 kW output power.","PeriodicalId":164663,"journal":{"name":"Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128929575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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