{"title":"Diamond Nanowire Synthesis, Properties and Applications","authors":"Muthaiah Shellaiah, K. Sun","doi":"10.5772/INTECHOPEN.78794","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.78794","url":null,"abstract":"Due to the superior hardness and Young’s modulus, biocompatibility, optical and fluo - rescence nanodiamond seems to be outstanding among carbon nanomaterials. In this footpath, the development of diamond nanowires (DNWs) is known to be a significantly innovative field due to their diverse applications such as sensors, semiconductors, and electrochemical utilities. Compared to carbon nanotubes, DNWs theoretically have ener- getic and mechanically viable structures. However, DNW synthesis in a reproducible way is still a challenging task. In fact, most of the DNWs can be successfully synthesized by chemical vapor deposition (CVD) and reactive-ion etching (RIE) techniques. By contrast, solution-based DNW synthesis has also emerged recently. A detailed study on DNW structures may help the emerging researchers to direct toward diverse applications. In this chapter, we comprehensively presented the up-to-date applications of DNWs along with their synthesis, structures and properties.","PeriodicalId":161597,"journal":{"name":"Nanowires - Synthesis, Properties and Applications","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126603848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Parasitic Capacitances on Scaling Lateral Nanowire","authors":"U. Das, T. K. Bhattacharyya","doi":"10.5772/INTECHOPEN.81099","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.81099","url":null,"abstract":"The gate-all-around silicon nanowire transistor (GAA-NW) has manifested itself as one of the most fortunate candidates for advanced node integrated circuits (ICs). As the GAA transistor has stronger gate control, better scalability, as well as improved transport properties, the device has been considered as a potential alternative for scaling beyond FinFET. In recent publications, the basic feature and scalability of nanowire have been widely explored primarily focusing on intrinsic device characteristics. Although the GAA-NW has superior gate control compared to other architectures, the device is sur - rounded by huge vertical gate metal line and S/D contact metal lines. The presence of this vast metal line forms a strong parasitic capacitance. While scaling down sub-7 nm node dimensions, these capacitances influence strongly on the overall device performances. In this chapter, we have discussed the effects of various parasitic capacitances on scaling the device dimensions as well as their performances at high-frequency operations. TCAD-based compact model was used to study the impacts of scaling GAA-NW’s dimensions on power performance and area gain perspective (PPA).","PeriodicalId":161597,"journal":{"name":"Nanowires - Synthesis, Properties and Applications","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127670524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of Electrochemical and Structurally Enhanced LiMn2O4 Nanowire Cathode System","authors":"Natasha Ross, S. Willenberg, E. Iwuoha","doi":"10.5772/INTECHOPEN.80077","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.80077","url":null,"abstract":"The performance of the battery cathode depends on the electrode microstructure and morphology, as well as the inherent electrochemical properties of the cathode materials. The spinel LiMn2O4 is the most promising candidate as a cathode material because of its low cost and nontoxicity compared with commercial LiCoO2. However, there is still a challenge to synthesize high-quality single-crystal nanostructured cathode materials. Nanowires offer advantages of a large surface to volume ratio, efficient electron conducting pathways and facile strain relaxation. To enhance the activity and stability, flexible spinel nanowires are synthesized, via α-MnO2 nanowire precursor method. Ultrathin LiMn2O4 nanowires with cubic spinel structure were synthesized by using a solvothermal reaction to produce α-MnO2 nanowire followed by solid-state lithiation. LiMn2O4 nanowires have diameters less than 10 nm and lengths of several micrometers. The LiMn2O4 nanowires are used as stabilizing support during the electrochemical redox processes. The unique nanoporous material effectively accommodates structural transformation during Li+ ion insertion and effectively reduces Li+ diffusion distances, reducing the volumetric changes and lattice stresses during charge and discharge. Galvanostatic battery testing showed that LiMn2O4 nanowires delivered 146 mAh/g in a large potential window. The electrochemical and spectrochemical interrogation techniques demonstrated that LiMn2O4 nanowires are promising cathode materials for lithium ion batteries as apposed to LiMn2O4 powders.","PeriodicalId":161597,"journal":{"name":"Nanowires - Synthesis, Properties and Applications","volume":"105 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanowires for Room-Temperature Mid-Infrared Emission","authors":"A. Alhodaib, Y. Noori, A. Krier, A. Marshall","doi":"10.5772/INTECHOPEN.79463","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.79463","url":null,"abstract":"InAs-based nanowires hold a promise to offer transformational technologies for infrared photonic applications. Site-controlled InAs nanowire growth on low-cost Si substrates offers the practical integration advantages that silicon photonics benefits from. This includes the realisation of cheap photonic circuitries, light emitters and detectors that are otherwise expensive to realise with III/V material-based substrates. This chapter details the growth development of advanced faceted multi-quantum well structures within InAs nanowires using molecular beam epitaxy. We review the crystal structure for the faceted quantum wells along with an analysis of their optical emission characteristics which shows quantum confinement and localisation of the carriers on the quantum well nanostructure. This enables tuning of the emission wavelength and enhanced emission intensity up to the technologically important room-temperature operation point.","PeriodicalId":161597,"journal":{"name":"Nanowires - Synthesis, Properties and Applications","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132981757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xian Lin Zeng, T. Karwoth, A. Koblischka-Veneva, Michael R. Koblischka, J. Schmauch, U. Hartmann, T. Hauet
{"title":"Magnetoresistance and Structural Characterization of Electrospun La1−xSrxMnO3 Nanowire Networks","authors":"Xian Lin Zeng, T. Karwoth, A. Koblischka-Veneva, Michael R. Koblischka, J. Schmauch, U. Hartmann, T. Hauet","doi":"10.5772/INTECHOPEN.80451","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.80451","url":null,"abstract":"Nanowire network fabrics of La 1 (cid:1) x Sr x MnO 3 (LSMO) with different doping levels x = 0.2, 0.3, and 0.4 were fabricated by means of electrospinning. The resulting nanowires are up to 100 μ m long with a mean diameter of about 230 nm. The nanowires form a nonwoven fabric-like arrangement, allowing to attach electric contacts for magnetoresistance (MR) measurements. The resistance in applied magnetic fields and the MR effect were measured in the temperature range 2 K < T < 300 K in magnetic fields up to 10 T applied perpendicular to the sample surface. An MR ratio of about 70% is obtained for x = 0.2 at 10 T applied field and T = 20 Kr. The highest low-field MR of 5.2% (0.1 T) is obtained for the sample with x = 0.2. Magnetization measurements reveal the soft magnetic character of the samples. A thorough analysis of the microstructure of these nanowire networks is performed including scanning electron microscopy (SEM) and transmission electron microscopy (TEM).","PeriodicalId":161597,"journal":{"name":"Nanowires - Synthesis, Properties and Applications","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126925808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}