Silicon Materials最新文献

{"title":"The Silicon on the Catalysis: Hydrodesulfurization of Petroleum Fractions","authors":"D. A. Cabrera-Munguía, L. Rosales-Marines, A. Rubio-Ríos, L. Farías-Cepeda, A. Romero-Galarza","doi":"10.5772/INTECHOPEN.84724","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.84724","url":null,"abstract":"","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131441655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ceramics (Si- and Al-Based Oxides)-Graphene Hybrids and Advanced Applications","authors":"M. Ikram, M. U. Farooq","doi":"10.5772/INTECHOPEN.85575","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.85575","url":null,"abstract":"This book chapter will describe the recent advancements in advanced carbon-ceramics based hybrid materials, enhanced properties and efficient applications. There are various fabrication methods, Firstly, authors will discuss a solvothermal/ hot-pressing method which is employed to fabricate hybrids composed of cross-linked γ -Al 2 O 3 nanorods and reduced graphite oxide (rGO) platelets. After calcination and hot-press processing, monoliths of Al 2 O 3 -rGO hybrids are obtained with improved physical properties. It is found that the oxygen-containing groups on graphene oxide benefit to the adsorption of Al-(OC 3 H 7 ) 3 (aluminum isopropoxide), leading to the uniform dispersion of rGO with Al 2 O 3 which is hydrolyzed from aluminum isopropoxide in solvothermal reactions. Further, this research methodol-ogy has been extended to another ceramics-graphene nanostructure assembly, i.e., silica-rGO hybrids, by optimizing experimental conditions for the hydrothermal and hot pressing process. This book chapter will be a significant contribution for the applications of ceramics-graphene assembly nanomaterials, which can be made by simple fabrication route and which can be further applied as electrolytes, catalysts, conductive, electrochemically active, and as dielectric materials for the high-temperature applications due to enhanced physical properties.","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133677208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable Synthesis of Few-Layer Graphene on β-SiC(001)","authors":"Olga V. Molodtsova, Alexander N. Chaika, Victor Yu. Aristov","doi":"10.5772/INTECHOPEN.86162","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.86162","url":null,"abstract":"Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spin-polarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β -SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β -SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β -SiC, opening up opportunities for new applications.","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133266284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silica-Reinforced Deproteinized Natural Rubber","authors":"S. S. Sarkawi","doi":"10.5772/INTECHOPEN.85678","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.85678","url":null,"abstract":"Reinforcement effect of silica-silane system in deproteinized natural rubber (DPNR) is reported. The influence of mixing temperature and sulfur ranks in silane bis-triethoxysilylpropyl-polysulfide is compared between silica-DPNR and silica-natural rubber (NR). Dispersion morphology of silica and rubber-to-filler interaction in DPNR is visualized by atomic force microscopy and TEM network visualization, respectively. DPNR compound shows smaller influence of dump temperature and more constant mechanical properties as compared to NR compound. Establishment of the silica-silane-rubber coupling in DPNR tread compound results in an improvement in dynamic properties especially the lower tan δ at 60°C which indicates the lower rolling resistance of tire. DPNR shows better mechanical and dynamic properties as compared to NR.","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114735968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Silicon Content in Functional Properties of Thin Films","authors":"H. S. Vanegas, J. Alfonso, J. Olaya","doi":"10.5772/INTECHOPEN.85435","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.85435","url":null,"abstract":"Silicon (Si) has been the paradigm of the electronic industry, because it has been used in fabrication of different electronic circuit elements such as diodes, operational amplifiers, transistors, and in the last few decades, it has been the base material of the development of solar energy industry. However, other research fields in which the physical and chemical properties of Si have demonstrated to be relevant to applications in areas such as the mechanical, optical, electrical, and electrochemical are less known. Therefore, it is relevant to know the technology that has generated materials with new or better physical and chemical properties, such as the nanocomposite materials that have been growing in thin films. These films exhibiting new properties with respect to the bulk material and with the addition of Si, have demonstrated to improve the properties of the transition metal nitride (MeN), obtaining thin films with a high nanohardness, wear resistance, corrosion resistance, and high thermal stability. Therefore, the main objective of this chapter is to know the role that plays the incorporation Si in growth, microstructure, chemical composition, and functional properties of ZrN thin films.","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124726753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Introductory Chapter: Silicon","authors":"B. Zaidi, S. Belghit","doi":"10.5772/INTECHOPEN.85802","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.85802","url":null,"abstract":"Silicon is a semiconductor whose number of free electrons is less than conductor but more than that of an insulator. Two kinds of energy band which are conduction and valence. Series of energy levels having valence electrons forms valance band in solid. At 0°K, the energy levels of valence band are filled with electrons. This band contains maximum of energy when the electrons are in valence band. Conduction band is the higher energy level band, which is the minimum of energy. Conduction band is partially filled by the electrons, which are known as the free electrons as they can move anywhere in solid. These electrons are responsible for current flowing. There is a gap of energy. The difference between the conduction band and valence band is called energy gap. For semiconductors, the gap is neither large nor the bands get overlapped (Figure 1).","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130008488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New Material for Si-Based Light Source Application for CMOS Technology","authors":"L. Phuong","doi":"10.5772/INTECHOPEN.84994","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.84994","url":null,"abstract":"In this chapter, an approach to enhance the radiative recombination of the Ge film grown on the Si substrate is presented. The Ge band gap structure could be modified by applying a tensile strain and high n-doping in the Ge epilayers. It thus becomes a direct band gap material with high photoluminescence efficiency which is compatible with mainstream silicon technology. The interdiffusion effect between Ge film and Si substrate is also mentioned in this section. We proposed a new method to suppress the Si/Ge interdiffusion to reduce the effect of Si atoms on the optical property of Ge film due to Si presence.","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130504721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells","authors":"Z. Ling, Zheng Xin, Puqun Wang, R. Sridharan, C. Ke, R. Stangl","doi":"10.5772/INTECHOPEN.85039","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.85039","url":null,"abstract":"Tunnel layer passivated contacts have been successfully demonstrated for next-generation silicon solar cell concepts, achieving improved device performance stemming from the significantly reduced contact recombination of the solar cell contacts. However, these carrier-selective passivated contacts are currently deployed only at the rear side of the silicon solar cell, while the front side adopts a conventional diffused junction and contacting scheme. In this work, we report on the novelty and feasibility of deploying tunnel layer passivated contacts on both sides of a silicon wafer-based solar cell, featuring a textured front surface and a planar rear surface. In particular, we demonstrate that silicon solar cells incorporating our in-house developed electron-selective thermal-SiO x /poly-Si(n + ) and hole-selective thermal-SiO x /poly-Si(p + ) passivated contacts have a solar cell efficiency potential approaching 24%. Deploying contact passivation only at the rear side of the solar cell, we have reached a solar cell efficiency of 21.7%, using conventional screen printing for metallization. We present a systematic approach of evaluating our in-house developed electron-selective and hole-selective passivated contacts on both textured and planar lifetime test structures, as well as dark I – V test structures, to extract the recombination current density j 0 and the contact resistance R c of the passivated contact, which is used for process optimization as well as for subsequent efficiency potential prediction. The two key challenges aiming at a double-sided integration of passivated contacts are (1) parasitic absorption within the front-side highly doped poly-Si capping layer, requiring the processing of ultrathin ( ≤ 10-nm) contact passivation layers. This has been quantified by numerical simulation (using SunSolve ™ ) and also solved experimentally, i.e., processing ultrathin 3-/10-nm hole/electron extracting SiO x /poly-Si(p our efficiency potential prediction (using the measured j 0 and R c values of our developed contact passivation layers), bifacial double-sided passivated contact solar cells (efficiency potential of (cid:1) 23.2%, using our layers) can clearly outperform rear-side-only passivated contact solar cells (efficiency potential of (cid:1) 22.5%). on the passivation quality, comparing wet-chemically formed oxides (wet-SiO x ), UV photo-oxidation-formed ozone oxides (ozone-SiO x ), and in situ thermal oxidation-formed oxides (thermal-SiO x ); (ii) the impact on the contact passivation quality after doped silicon capping layers were applied upon the tunnel oxide layers on the same lifetime test structures (formed via tube diffusion doping of low-pressure chemical vapor deposition (LPCVD) of intrinsic polysilicon layers, to serve as either electron-selective or hole-selective capping layers); (iii) the influence of the surface conditions on the passivation quality by both types of electron- or hole-selective passivated contacts; (iv) t","PeriodicalId":148061,"journal":{"name":"Silicon Materials","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132413313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}