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Germanium quantum dots formed by oxidation of SiGe alloys 锗量子点是由SiGe合金氧化形成的

Guizhou Science Pub Date : 2006-05-20 DOI: 10.7498/aps.55.2488

L. Shi-rong, Huang Wei-qi, Qin Zhao-Jian

{"title":"Germanium quantum dots formed by oxidation of SiGe alloys","authors":"L. Shi-rong, Huang Wei-qi, Qin Zhao-Jian","doi":"10.7498/aps.55.2488","DOIUrl":"https://doi.org/10.7498/aps.55.2488","url":null,"abstract":"We report the investigation on the oxidation behavior of Si 1-x Ge x alloys (x=0.05, 0.15, and 0.25). In the PL spectra of Germanium quantum dots formed by the oxidation of Si 1-x Ge x substrate, at high oxidation temperature (800℃—1000℃) an emission band from 550nm to 720nm would originate from the diameter distribution of germanium nanoparticles (Ge clusters diameter: 3nm—4nm); and at low oxidation temperature (400℃—600℃) with Laser beam radiation, there is an emission band from 650nm to 900nm which may have come from the germanium clusters (diameter: 4nm—5nm). It is clearly seen that there are several peaks at 572nm, 620nm, 671nm, 724nm, 769nm, 810nm and 861nm wavelengths along the emission band, which are correlated to the quantum confinement effect with 3.32nm, 3.54nm, 3.76nm, 3.98nm, 4.17nm, 4.35nm and 4.62nm diameters of the germanium clusters, respectively. The simulation result with MC method demonstrates that the germanium clusters of the above diameters are more stable under the above conditions. A quantum confinement model has been set up, and calculations with the UHFR method and the quantum confinement analysis have been proposed to explain the PL spectra.","PeriodicalId":12872,"journal":{"name":"Guizhou Science","volume":"55 1","pages":"2488-2491"},"PeriodicalIF":0.0,"publicationDate":"2006-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71343491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

OPTICAL CONSTANTS OF GE NANOLAYERS IN OXIDATION OF SIGE ALLOYS DETERMINED BY ELLIPSOMETRY 用椭偏法测定锗纳米层氧化硅合金的光学常数

Guizhou Science Pub Date : 2004-01-01 DOI: 10.7498/aps.54.972

Cai Shao-hong

引用次数: 0