1982 Symposium on VLSI Technology. Digest of Technical Papers最新文献

筛选

英文中文

Multilevel Ge-Se Film Based Resist Systems 多层Ge-Se薄膜基抗蚀剂系统

1982 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1982-06-30 DOI: 10.1117/12.933409

K. Tai, R. G. Vadimsky, E. Ong

{"title":"Multilevel Ge-Se Film Based Resist Systems","authors":"K. Tai, R. G. Vadimsky, E. Ong","doi":"10.1117/12.933409","DOIUrl":"https://doi.org/10.1117/12.933409","url":null,"abstract":"Multilevel resist systems based on Ge-Se films make possible the use of optical projection printers for printing 0.5-1.0μm features. The four multilevel resist systems considered employ either a photosensitive or a photopassive polymer layer for planarization. In bilevel schemes the surface of the Ge-Se film is reacted in a Ag(CN)i- containing solution to form a Ag2Se imaging layer. No reacted Ge-Se is used as a sacrificial layer in trilevel schemes. Ge-Se films are resistant to attack by oxygen plasma and therefore make good masks for pattern transfer by dry (reactive ion) etching, to a thick underlying photopassive polymer layer. Because of their high absorbance (a 105cm-1) in the ultraviolet and violet, Ge-Se patterns can also be used as exposure masks for transferring images to a thick underlying photosensitive polymer layer. The latter is \"flood\" exposed through the Ge-Se mask and wet developed. Both dry and wet processes provide steep wall-profile patterns in the polymer layer. The dry process provides superior feature size control while the wet process offers reduced processing cost. The exceptional lithographic performance exhibited by Ge-Se resist systems is attributed to a unique edge-sharpening effect; diffraction is compensated for by lateral silver diffusion in the Ag2Se layer. Patterns having 0.6μm lines and spaces are obtained over lcmXlcm fields with a defocus tolerance of 2.5μm using a standard Zeiss 10:1 reduction lens (N.A.=0.28, λ=436nm). Results indicate that optical lithography can practically print features in the size regime previously reserved for a-beam or x-ray based lithographic technologies.","PeriodicalId":120981,"journal":{"name":"1982 Symposium on VLSI Technology. Digest of Technical Papers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1982-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127733106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1