Physics and Simulation of Optoelectronic Devices XXVIII最新文献

Square wave excitability in optically injected quantum-dot lasers (Conference Presentation) 光注入量子点激光器的方波激发性(会议报告)

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-09 DOI: 10.1117/12.2551181

B. Kelleher

引用次数: 0

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators 用SPICE电路模拟器预测光电晶体管的光触发放大

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-02 DOI: 10.1117/12.2545771

Chiara Rossi, J. Sallese

引用次数: 1

Multi-scale modeling of electronic, optical, and transport properties of III-N alloys and heterostructures III-N合金和异质结构的电子、光学和输运性质的多尺度建模

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-02 DOI: 10.1117/12.2551055

S. Schulz, D. Chaudhuri, M. O’Donovan, M. O’Donovan, S. Patra, T. Streckenbach, P. Farrell, O. Marquardt, T. Koprucki

引用次数: 1

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach 单片III-V激光器中位错对硅的影响:一种理论方法

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-02 DOI: 10.1117/12.2547327

C. Hantschmann, Zizhuo Liu, M. Tang, A. Seeds, Huiyun Liu, I. White, R. Penty

{"title":"Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach","authors":"C. Hantschmann, Zizhuo Liu, M. Tang, A. Seeds, Huiyun Liu, I. White, R. Penty","doi":"10.1117/12.2547327","DOIUrl":"https://doi.org/10.1117/12.2547327","url":null,"abstract":"The growth of reliable III-V quantum well (QW) lasers on silicon remains a challenge as yet unmastered due to the issue of carrier migration into dislocations. We have recently compared the functionality of quantum dots (QDs) and QWs in the presence of high dislocation densities using rate equation travelling-wave simulations, which were based on 10-μm large spatial steps, and thus only allowed the use of effective laser parameters to model the performance degradation resulting from dislocation-induced carrier loss. Here we increase the resolution to the sub-micrometer level to enable the spatially resolved simulation of individual dislocations placed along the longitudinal cavity direction in order to study the physical mechanisms behind the characteristics of monolithic 980 nm In(Ga)As/GaAs QW and 1.3 μm QD lasers on silicon. Our simulations point out the role of diffusion-assisted carrier loss, which enables carrier migration into defect states resulting in highly absorptive regions over several micrometers in QW structures, whereas QD active regions with their efficient carrier capture and hence naturally reduced diffusion length show a higher immunity to defects. An additional interesting finding not accessible in a lower-resolution approach is that areas of locally reduced gain need to be compensated for in dislocation-free regions, which may lead to increased gain compression effects in silicon-based QD lasers with limited modal gain.","PeriodicalId":115816,"journal":{"name":"Physics and Simulation of Optoelectronic Devices XXVIII","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125333472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated photonic delay-lasers for reservoir computing 用于储层计算的集成光子延迟激光器

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-02 DOI: 10.1117/12.2550576

G. Sande, K. Harkhoe, A. Katumba, P. Bienstman, G. Verschaffelt

{"title":"Integrated photonic delay-lasers for reservoir computing","authors":"G. Sande, K. Harkhoe, A. Katumba, P. Bienstman, G. Verschaffelt","doi":"10.1117/12.2550576","DOIUrl":"https://doi.org/10.1117/12.2550576","url":null,"abstract":"Currently, multiple photonic reservoir computing systems show great promise for providing a practical yet powerful hardware substrate for neuromorphic computing. Among those, delay-based systems offer a simple technological route to implement photonic neuromorphic computation. Its operation boils down to a time-multiplexing with the delay length limiting the processing speed. As most optical setups end up to be bulky employing long fiber loops or free-space optics, the processing speeds are ranging from kSa/s to tens of MSa/s. Therefore, we focus on external cavities which are far shorter than what has been realized before in such experiments. We present experimental results of reservoir computing based on a semiconductor laser, operating in a single mode regime around 1550nm, with a 10.8cm delay line. Both are integrated on an active/passive InP photonic chip built on the Jeppix platform. Using 23 virtual nodes spaced 50 ps apart in the integrated delay section, we increase the processing speed to 0.87GSa/s. The computational performance is benchmarked on a forecasting task applied to chaotic time samples. Competitive performance is observed for injection currents above threshold, with higher pumps having lower prediction errors. The feedback strength can be controlled by electrically pumping integrated amplifiers within the delay section. Nevertheless, we find good performance even when these amplifiers are unpumped. To proof the relevance and necessity of the external cavity on the computational capacity, we have analysed linear and nonlinear memory tasks. We also propose several post-processing methods, which increase the performance without a penalty to speed.","PeriodicalId":115816,"journal":{"name":"Physics and Simulation of Optoelectronic Devices XXVIII","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132369875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Frequency characteristics of a semi-closed structure in a guided-wave optical pressure sensor for detection of tsunami formation: investigation based on numerical simulations and experiments 海啸形成探测用导波光学压力传感器半封闭结构的频率特性:基于数值模拟和实验的研究

Physics and Simulation of Optoelectronic Devices XXVIII Pub Date : 2020-03-02 DOI: 10.1117/12.2541707

Taiju Triyama, H. Ono, Naoto Takaoka, M. Ohkawa

引用次数: 1