IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - 最新文献

High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique

Pub Date : 2006-01-13 DOI: 10.1109/IEDM.2005.1609314 A. Oishi, O. Fujii, T. Yokoyama, K. Ota, T. Sanuki, H. Inokuma, K. Eda, T. Idaka, H. Miyajima, S. Iwasa, H. Yamasaki, K. Oouchi, K. Matsuo, H. Nagano, T. Komoda, Y. Okayama, T. Matsumoto, K. Fukasaku, T. Shimizu, K. Miyano, T. Suzuki, K. Yahashi, A. Horiuchi, Y. Takegawa, K. Saki, S. Mori, K. Ohno, L. Mizushima, M. Saito, M. Iwai, S. Yamada, N. Nagashima, F. Matsuoka

A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

Pub Date : 2005-12-05 DOI: 10.1109/IEDM.2005.1609518 E. Toh, G. Wang, G. Lo, N. Balasubramanian, C. Tung, F. Benistant, L. Chan, G. Samudra, Y. Yeo

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

Pub Date : 2005-12-05 DOI: 10.1109/IEDM.2005.1609472 T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra

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