2009 IEEE International Memory Workshop

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2009 IEEE International Memory Workshop - 最新文献

On the Bipolar and Unipolar Switching Mechanisms Observed in NiO Memory Cells Made by Thermal Oxidation of Ni

Pub Date : 2009-05-10 DOI: 10.1109/IMW.2009.5090601 L. Goux, J. Lisoni, L. Courtade, C. Muller, M. Jurczak, D. Wouters

A Study of Stored Charge Interference and Fringing Field Effects in Sub-30nm Charge-Trapping NAND Flash

Pub Date : 2009-05-10 DOI: 10.1109/IMW.2009.5090576 Y. Hsiao, H. Lue, K. Hsieh, Rich Liu, Chih-Yuan Lu

FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications

Pub Date : 2009-05-10 DOI: 10.1109/IMW.2009.5090590 S. Puget, G. Bossu, C. Fenouiller-Beranger, P. Perreau, P. Masson, P. Mazoyer, P. Lorenzini, J. Portal, R. Bouchakour, T. Skotnicki

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