Ge2Sb2Te5的工程颗粒，用于实现具有进一步多电平功能的快速，低功耗和低漂移相变存储器

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479143

W. J. Wang, D. Loke, L. Law, L. P. Shi, R. Zhao, M. Li, L. L. Chen, H. Yang, Y. Yeo, A. Adeyeye, T. Chong, A. Lacaita

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引用次数: 14

摘要

相变存储器(PCM)是“通用存储器”的最佳候选之一。然而，它的低SET速度、高RESET功率和高电阻漂移是实现这一目标的关键挑战。本文利用晶粒化的Ge2Sb2Te5来控制PCM的结晶动力学和电学性能。我们报告说，与传统缩放相比，SET速度提高了120%。良好的稳定性(140°C)，复位功率降低30%，电阻漂移降低2倍。进一步演示了一个4状态/2位的多电平单元。这为制造高密度PCM器件提供了一条途径。

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Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities

Phase-change memory (PCM) represents one of the best candidates for a “universal memory”. However, its slow SET speed, high RESET power, and high resistance drift present key challenges towards this ambition. Here, grain-engineered Ge2Sb2Te5 is exploited to control the crystallization kinetics, and electrical properties of PCM. We report 120 % higher SET speeds with respect to conventional scaling. Good stability (140°C), 30 % RESET power reduction, and 2X lower resistance drift were also achieved. A 4-state/2-bit multilevel cell was further demonstrated. This provides a route to making high-density PCM devices.

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2012 International Electron Devices Meeting

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