{"title":"在m平面氮化镓小尺寸led的低效率下垂和控制辐射方向图和极化的方法中，具有超过1000 A/cm2的极高电流密度","authors":"A. Inoue, R. Kato, A. Yamada, T. Yokogawa","doi":"10.1109/IEDM.2012.6479114","DOIUrl":null,"url":null,"abstract":"A high current density over 1000 A/cm2 operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm2 has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED packages, the height of the LED chips, and the striped texture on the top m-plane surface.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"52 1","pages":"27.3.1-27.3.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Extremely high current density over 1000 A/cm2 operation in m-plane GaN small size LEDs with low efficiency droop and method for controlling radiation pattern and polarization\",\"authors\":\"A. Inoue, R. Kato, A. Yamada, T. Yokogawa\",\"doi\":\"10.1109/IEDM.2012.6479114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high current density over 1000 A/cm2 operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm2 has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED packages, the height of the LED chips, and the striped texture on the top m-plane surface.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"52 1\",\"pages\":\"27.3.1-27.3.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
在小芯片尺寸的m平面GaN-LED中成功地实现了超过1000 A/cm2的高电流密度。芯片尺寸为450 × 450 μm2的m平面GaN-LED在1000 a /cm2 (1134 mA)时的光输出功率为1353 mW，外部量子效率(EQE)为39.2%。m平面GaN-LED具有非对称辐射特性。辐射模式由LED封装的表面、LED芯片的高度和顶部m平面表面的条纹纹理控制。
Extremely high current density over 1000 A/cm2 operation in m-plane GaN small size LEDs with low efficiency droop and method for controlling radiation pattern and polarization
A high current density over 1000 A/cm2 operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm2 has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED packages, the height of the LED chips, and the striped texture on the top m-plane surface.
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