介绍sFCCSP -小间距低轮廓FCCSP解决方案

E. So, Albert Lan, C. Hsiao, Daniel Yu, Nistec Chang, F. Kao
{"title":"介绍sFCCSP -小间距低轮廓FCCSP解决方案","authors":"E. So, Albert Lan, C. Hsiao, Daniel Yu, Nistec Chang, F. Kao","doi":"10.1109/IMPACT.2011.6117241","DOIUrl":null,"url":null,"abstract":"As for mainstream portable application (Mobile Phone, Tablet, Handset Gamer), the higher density (array IO pitch <= 100um), higher thermal performance (better theta JA than overmold FCCSP) and lower profile (compare with overmold FCCSP) is necessary for package developing. As to satisfy the marketing needs, some suitable solution can be considered: Utilize Cu Pillar Bump to satisfy the fine pitch request; and also with the exposed die FCCSP to cover the lower profile & better thermal performance. As to come out an easy way to recognize the package type of this combination, the package type of “sFCCSP” (SPIL proposed FCCSP-Exposed Die Cu Pillar FCCSP) had be called for further discussion. In general, Cu Pillar was the fine pitch solution of FCCSP (<130um bump pitch), as the next generation of low IO(<200) application flip chip solution, Cu Pillar can provide a feasibility for better electrical performance but reasonable cost (design-in is necessary), and upcoming challenge is the ELK protection for 40nm / 28nm even finer IC technology. As regard the exposed die FC solution, it is obvious to realize the benefit of skipping overmold 60∼80um thickness for package total height reduction. Of course, the trade-off is either back side surface bleeding or package warpage. In this report, there is a test vehicle to show how we overcome the potential ELK crack & Die bleeding & package warpage issue to approach the mainstream technology for portable market.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A introduction of sFCCSP — Fine pitch low profile FCCSP solution\",\"authors\":\"E. So, Albert Lan, C. Hsiao, Daniel Yu, Nistec Chang, F. Kao\",\"doi\":\"10.1109/IMPACT.2011.6117241\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As for mainstream portable application (Mobile Phone, Tablet, Handset Gamer), the higher density (array IO pitch <= 100um), higher thermal performance (better theta JA than overmold FCCSP) and lower profile (compare with overmold FCCSP) is necessary for package developing. As to satisfy the marketing needs, some suitable solution can be considered: Utilize Cu Pillar Bump to satisfy the fine pitch request; and also with the exposed die FCCSP to cover the lower profile & better thermal performance. As to come out an easy way to recognize the package type of this combination, the package type of “sFCCSP” (SPIL proposed FCCSP-Exposed Die Cu Pillar FCCSP) had be called for further discussion. In general, Cu Pillar was the fine pitch solution of FCCSP (<130um bump pitch), as the next generation of low IO(<200) application flip chip solution, Cu Pillar can provide a feasibility for better electrical performance but reasonable cost (design-in is necessary), and upcoming challenge is the ELK protection for 40nm / 28nm even finer IC technology. As regard the exposed die FC solution, it is obvious to realize the benefit of skipping overmold 60∼80um thickness for package total height reduction. Of course, the trade-off is either back side surface bleeding or package warpage. In this report, there is a test vehicle to show how we overcome the potential ELK crack & Die bleeding & package warpage issue to approach the mainstream technology for portable market.\",\"PeriodicalId\":6360,\"journal\":{\"name\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2011.6117241\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2011.6117241","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

对于主流便携式应用(手机、平板电脑、手机游戏)来说,更高的密度(阵列IO间距<= 100um)、更高的热性能(θ JA优于上模FCCSP)和更低的轮廓(与上模FCCSP相比)是开发封装所必需的。为了满足市场的需求,可以考虑一些合适的解决方案:利用铜柱凸点来满足细间距的要求;以及外露的FCCSP芯片,以覆盖更低的轮廓和更好的热性能。为了提出一种简单的方法来识别这种组合的封装类型,“sFCCSP”的封装类型(SPIL提议的FCCSP- exposed Die Cu Pillar FCCSP)被要求进一步讨论。总的来说,Cu柱是FCCSP (<130um凸距)的细间距解决方案,作为下一代低IO(<200)应用倒装芯片解决方案,Cu柱可以提供更好的电气性能的可行性,但成本合理(设计- In是必要的),而即将到来的挑战是40nm / 28nm更细的IC技术的ELK保护。对于外露模FC解决方案,很明显可以实现跳过模具60 ~ 80um厚度以降低封装总高度的好处。当然,代价要么是背面表面出血,要么是包装翘曲。在本报告中,有一个测试车辆来展示我们如何克服潜在的ELK裂纹和模具出血和封装翘曲问题,以接近便携式市场的主流技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A introduction of sFCCSP — Fine pitch low profile FCCSP solution
As for mainstream portable application (Mobile Phone, Tablet, Handset Gamer), the higher density (array IO pitch <= 100um), higher thermal performance (better theta JA than overmold FCCSP) and lower profile (compare with overmold FCCSP) is necessary for package developing. As to satisfy the marketing needs, some suitable solution can be considered: Utilize Cu Pillar Bump to satisfy the fine pitch request; and also with the exposed die FCCSP to cover the lower profile & better thermal performance. As to come out an easy way to recognize the package type of this combination, the package type of “sFCCSP” (SPIL proposed FCCSP-Exposed Die Cu Pillar FCCSP) had be called for further discussion. In general, Cu Pillar was the fine pitch solution of FCCSP (<130um bump pitch), as the next generation of low IO(<200) application flip chip solution, Cu Pillar can provide a feasibility for better electrical performance but reasonable cost (design-in is necessary), and upcoming challenge is the ELK protection for 40nm / 28nm even finer IC technology. As regard the exposed die FC solution, it is obvious to realize the benefit of skipping overmold 60∼80um thickness for package total height reduction. Of course, the trade-off is either back side surface bleeding or package warpage. In this report, there is a test vehicle to show how we overcome the potential ELK crack & Die bleeding & package warpage issue to approach the mainstream technology for portable market.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信