L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Cabrini, A. Persico, V. Delaye, D. Blachier, J. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Raty, C. Jahan, V. Sousa, G. Torelli, S. Maitrejean, B. De Salvo, G. Reimbold
{"title":"无铅焊流下掺c相变存储器中Ti的影响","authors":"L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Cabrini, A. Persico, V. Delaye, D. Blachier, J. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Raty, C. Jahan, V. Sousa, G. Torelli, S. Maitrejean, B. De Salvo, G. Reimbold","doi":"10.1109/IEDM.2012.6479069","DOIUrl":null,"url":null,"abstract":"In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow\",\"authors\":\"L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Cabrini, A. Persico, V. Delaye, D. Blachier, J. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Raty, C. Jahan, V. Sousa, G. Torelli, S. Maitrejean, B. De Salvo, G. Reimbold\",\"doi\":\"10.1109/IEDM.2012.6479069\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479069\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479069","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow
In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented.
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