L. Perniola, P. Noé, Q. Hubert, S. Souiki, G. Ghezzi, G. Navarro, A. Cabrini, A. Persico, V. Delaye, D. Blachier, J. Barnes, E. Henaff, M. Tessaire, E. Souchier, A. Roule, F. Fillot, J. Ferrand, A. Fargeix, F. Hippert, J. Raty, C. Jahan, V. Sousa, G. Torelli, S. Maitrejean, B. De Salvo, G. Reimbold
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Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow
In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented.
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