Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

We present the first computational study employing a full quantum transport model to investigate the effect of interface traps in nanowire InAs Tunnel FETs and MOSFETs. To this purpose, we introduced a description of interface traps in a simulator based on the NEGF formalism and on a 8×8 k·p Hamiltonian and accounting for phonon scattering. Our results show that: (a) even a single trap can detereorate the inverse sub-threshold slope (SS) of a nanowire InAs Tunnel FET; (b) the inelastic phonon assisted tunneling (PAT) through interface traps results in a temperature dependence of the Tunnel FETs IV characteristics; (c) the impact of interface traps on Ioff is larger in Tunnel FETs than in MOSFETs; (d) interface traps represent a sizable source of device variability.