D. Kim, P. Hundal, A. Papavasiliou, P. Chen, C. King, J. Paniagua, M. Urteaga, B. Brar, Y. G. Kim, J. Kuo, J. Li, P. Pinsukanjana, Y. Kao
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E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator
We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An Lg=35 nm InGaAs MOSFET with EOT = ~ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm_max > 2 mS/μm at VDS = 0.5 V in any III-V MOSFETs.
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