用解析模型评价亚渗透纳米束网络晶体管的性能

N. Pimparkar, Jing Guo, M. A. Alam
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引用次数: 16

摘要

纳米束网络晶体管(nbt)已经成为多晶硅和有机晶体管的一种可行的、更高性能的替代品,在微电子显示器、化学/生物传感器和光伏电池中有可能应用。提出了nbt(低于渗流极限)I-V特性的简单解析模型,并通过数值模拟和实验数据进行了验证。基于物理的预测模型提供了晶体管特性与设计参数之间的简单关系,可用于nbt的优化。该模型为最近关于NBT特性和纳米束网络电净化的实验提供了重要的见解
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance assessment of sub-percolating nanobundle network transistors by an analytical model
Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, and photovoltaics. A simple analytical model for I-V characteristics of NBTs (below the percolation limit) is proposed and validated by numerical simulation and experimental data. The physics-based predictive model provides a simple relation between transistor characteristics and design parameters which can be used for optimization of NBTs. The model provides important insights into the recent experiments on NBT characteristics and electrical purification of nanobundle networks
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