Jun-Fei Zheng, Philip Chen, Tomas H. Baum, R. Lieten, W. Hunks, S. Lippy, A. Frye, Weimin Li, James O'Neill, Jeff Xu, John Zhu, Jerry Bao, V. Machkaoutsan, M. Badaroglu, G. Yeap, G. Murdoch, J. Bommels, Z. Tokei
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We report for the first time a highly selective CVD Co deposition on Cu to fill a 45nm diameter 3:1 aspect ratio via in a Cu dual damascene structure. We have achieved void-free Co fill of the via, demonstrating that a selective bottom-up via fill with Co is a potentially viable approach. Defect formation and control in the process and device integration are discussed. This selective process provides an opportunity to reduce via resistance and shrink the minimum metal 1 (M1) area for aggressive standard cell size scaling as needed for 7nm technology.
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