100兆赫CMOS电路使用顺序横向固化硅薄膜晶体管在塑料上

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609514

M. Kane, L. Goodman, A. Firester, P. C. van der Wilt, A. Limanov, J. Im

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引用次数: 6

摘要

我们已经在塑料衬底上使用顺序横向固化的硅tft制造了CMOS电路。NMOS器件的单位增益频率大于250 MHz，而CMOS环形振荡器的工作频率为100 MHz。据我们所知，这些是有史以来直接在塑料上制造的性能最高的晶体管和速度最快的电路

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100 MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic

We have fabricated CMOS circuits using sequential laterally solidified silicon TFTs on plastic substrates. NMOS devices have unity-gain frequencies greater than 250 MHz, and CMOS ring oscillators operate at 100 MHz. To our knowledge these are the highest performance transistors and the fastest circuits ever fabricated directly on plastic

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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