{"title":"全面和易于使用的SEM分析结构，用于BiCMOS工艺开发","authors":"S. Leibiger","doi":"10.1109/ASMC.2002.1001639","DOIUrl":null,"url":null,"abstract":"A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comprehensive and easy to use SEM analysis structures for BiCMOS process development\",\"authors\":\"S. Leibiger\",\"doi\":\"10.1109/ASMC.2002.1001639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.\",\"PeriodicalId\":64779,\"journal\":{\"name\":\"半导体技术\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"半导体技术\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2002.1001639\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comprehensive and easy to use SEM analysis structures for BiCMOS process development
A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.
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