RRAM SET速度干扰困境与快速统计预测方法

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479012

Wun-Cheng Luo, Jen-Chieh Liu, Hsien-Tsung Feng, Yen-Chuan Lin, Jiun-Jia Huang, Kuan-Liang Lin, T. Hou

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引用次数: 23

摘要

本文首次使用基于统计的预测方法对RRAM中的SET速度干扰困境进行了全面研究。基于渗透模型和幂律V-t依赖关系的快速坡电压应力与耗时的恒压应力具有良好的一致性，并在文献中被用于评估RRAM器件的电流状态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.

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2012 International Electron Devices Meeting

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