Chun-Hsiung Hung, H. Lue, Shuo-Nan Hung, C. Hsieh, Kuo-Pin Chang, Ti-Wen Chen, Shih-Lin Huang, Tzung Shen Chen, Chih-Shen Chang, Wen-Wei Yeh, Y. Hsiao, Chieh-Fang Chen, Shih-Cheng Huang, Yan-Ru Chen, Guan-Ru Lee, Chih-Wei Hu, Shih-Hung Chen, C. Chiu, Y. Shih, Chih-Yuan Lu
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Design innovations to optimize the 3D stackable vertical gate (VG) NAND flash
The design architecture for 3D vertical gate (VG) NAND Flash is discussed in detail. With the unique structure of 3D VG and its decoding method, we have developed several important design innovations to optimize this technology: (1) “Shift-BL scramble” to average the BL capacitances, providing uniform CBL's for various memory layers; (2) Optimized read waveforms to suppress the hot-carrier induced read disturb in the page reading mode; (3) Novel reverse read with “multi-Vt sensing technique” for different memory layers to compensate the Vt variation due to the layer-to-layer process difference; (4) Program inhibit method and technique to minimize the “Z-directional” self-boosting program disturb in 3D stackable memory. Optimized chip-level performances with excellent memory window for SLC and MLC operations are demonstrated on a 2-layer 3D VG NAND chip.
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