利用嵌段共聚物纳米光刻技术灵敏地评估半导体材料在亚5纳米分辨率下化学干蚀刻速率的变化

IF 1.4 4区 工程技术
E. Ashley, Peter J. DudaIII, P. Nealey
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引用次数: 1

摘要

离子注入是一种可靠且成熟的方法来定制硅的电子特性。然而,制造掺杂的超细半导体纳米结构可能具有挑战性。离子注入对硅的干蚀刻速率有明显的影响,随着目标尺寸缩小到几十纳米以下,这种影响变得越来越重要。当将嵌段共聚物模板纳米孔(间距= 37.5 nm,直径~ 25 nm)干刻蚀阵列成p型、n型和未掺杂Si时,我们观察到n型区域的横向刻蚀速率明显大于p型或未掺杂区域。通过对纳米结构孔阵列的高分辨率电子显微镜图像分析,我们能够以亚纳米灵敏度提取孔的孔隙率和平均半径,并比较不同掺杂条件下的相对蚀刻速率。我们发现,简并掺杂的n型硅在横向上的蚀刻速度比p型硅快17%到27%,导致孔隙率明显增加,因此机械稳定性降低。在这里,我们证明了对密集排列的多孔纳米结构进行自上而下的尺寸分析是一种可靠的方法,可以评估掺杂Si的横向化学蚀刻速率的极小差异,其灵敏度达到了以前无法实现的程度。嵌段共聚物自组装纳米结构的微小、致密的特性被证明是这种应用的理想选择。这种提出的方法可以用于设计非均质纳米结构的制造工艺,因为在微米尺度上可能在工艺公差范围内的轻微干蚀刻速率变化似乎在纳米尺度上具有重要的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution
Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ∼25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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