{"title":"用于超cmos逻辑应用的50nm In/sub 0.7/Ga/sub 0.3/As hemt性能评估","authors":"Daehyun Kim, J. D. del Alamo, Jaehak Lee, K. Seo","doi":"10.1109/IEDM.2005.1609467","DOIUrl":null,"url":null,"abstract":"We have studied the suitability of nanometer-scale In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs as a high-speed, low-power logic technology for beyond-CMOS applications. To this end, we have fabricated 50-150 nm gate length In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs with different gate stack designs. The 50 nm HEMTs exhibit I<sub>ON</sub>/I<sub>OFF</sub> ratios in excess of 10<sup>5</sup> and DIBL less than 90 mV/dec. Compared with state-of-the-art Si MOSFETs, the non-optimized 50 nm In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs provide equivalent highspeed performance with 15 times lower DC power dissipation and at least 2.7 times higher f<sub>T</sub> at equivalent power dissipation level. In the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs HEMTs hold considerable promise","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"82 1","pages":"767-770"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications\",\"authors\":\"Daehyun Kim, J. D. del Alamo, Jaehak Lee, K. Seo\",\"doi\":\"10.1109/IEDM.2005.1609467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the suitability of nanometer-scale In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs as a high-speed, low-power logic technology for beyond-CMOS applications. To this end, we have fabricated 50-150 nm gate length In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs with different gate stack designs. The 50 nm HEMTs exhibit I<sub>ON</sub>/I<sub>OFF</sub> ratios in excess of 10<sup>5</sup> and DIBL less than 90 mV/dec. Compared with state-of-the-art Si MOSFETs, the non-optimized 50 nm In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs provide equivalent highspeed performance with 15 times lower DC power dissipation and at least 2.7 times higher f<sub>T</sub> at equivalent power dissipation level. In the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs HEMTs hold considerable promise\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"82 1\",\"pages\":\"767-770\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications
We have studied the suitability of nanometer-scale In0.7Ga0.3As HEMTs as a high-speed, low-power logic technology for beyond-CMOS applications. To this end, we have fabricated 50-150 nm gate length In0.7Ga0.3As HEMTs with different gate stack designs. The 50 nm HEMTs exhibit ION/IOFF ratios in excess of 105 and DIBL less than 90 mV/dec. Compared with state-of-the-art Si MOSFETs, the non-optimized 50 nm In0.7Ga0.3As HEMTs provide equivalent highspeed performance with 15 times lower DC power dissipation and at least 2.7 times higher fT at equivalent power dissipation level. In the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs HEMTs hold considerable promise
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