用于RFIC应用的高q级片上电感器嵌入晶圆级封装

Tao Feng, Jian Cai, Hye-Kyong Kwon, Qian Wang, Xinyu Dou
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引用次数: 1

摘要

晶圆级封装(WLP)技术已被用于在硅衬底上集成高q电感器。这些电感包括一个厚的镀铜重布线,以减少串联电阻和一个厚的介电层,将电感器与硅衬底分开。测量结果表明,0.77 nH电感在4 GHz时的峰值o因子为30,与HFSS模拟性能吻合较好。因此,该技术在WLP中实现了嵌入式高q电感器,可以提高射频系统的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Q on-chip inductors embedded in wafer-level package for RFIC applications
Wafer level packaging (WLP) technology has been used to integrate high-Q inductor on Si substrate. These inductors consist of a thick Cu electroplated rerouting to reduce series resistance and a thick dielectric layer to separate the inductors from Si substrate. The measured results show that the peak O-factor is 30 at 4 GHz for a 0.77 nH inductor, which is good agreement with the simulated performance by HFSS. Therefore, this technology realizes embedded high-Q inductors in WLP and can improve the performance of RF system.
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