用于RFIC应用的高q级片上电感器嵌入晶圆级封装

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI:10.1109/ICEPT.2008.4606957

Tao Feng, Jian Cai, Hye-Kyong Kwon, Qian Wang, Xinyu Dou

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引用次数: 1

摘要

晶圆级封装(WLP)技术已被用于在硅衬底上集成高q电感器。这些电感包括一个厚的镀铜重布线，以减少串联电阻和一个厚的介电层，将电感器与硅衬底分开。测量结果表明，0.77 nH电感在4 GHz时的峰值o因子为30，与HFSS模拟性能吻合较好。因此，该技术在WLP中实现了嵌入式高q电感器，可以提高射频系统的性能。

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High-Q on-chip inductors embedded in wafer-level package for RFIC applications

Wafer level packaging (WLP) technology has been used to integrate high-Q inductor on Si substrate. These inductors consist of a thick Cu electroplated rerouting to reduce series resistance and a thick dielectric layer to separate the inductors from Si substrate. The measured results show that the peak O-factor is 30 at 4 GHz for a 0.77 nH inductor, which is good agreement with the simulated performance by HFSS. Therefore, this technology realizes embedded high-Q inductors in WLP and can improve the performance of RF system.

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2008 International Conference on Electronic Packaging Technology & High Density Packaging

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