通过光学测量控制100 nm以下光刻成像性能

I. Grodnensky, S. Enayati, J. Manka, S. Mizutani, S. Slonaker
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引用次数: 0

摘要

我们提出了一种新的技术,用于准确和快速评估光刻成像性能的临界尺寸(cd)为100纳米及以下。与使用扫描电镜或电CD测量的传统方法相比,它的优势基于两个关键因素。首先,它利用与特定CD相对应的特殊设计的标记。其次,用CCD电视摄像机测量标记图像的辐照度,而不是标记尺寸。结合起来,这些提供了一种易于实施和廉价的技术来控制曝光工具成像性能。在实际应用中,最佳聚焦测定的重复性(3/spl sigma/)小于5 nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controlling lithographic imaging performance at sub-100 nm CD with optical measurements
We present a new technique for accurate and fast evaluation of lithographic imaging performance at critical dimensions (CDs) of 100 nm and below. Its advantages over traditional methods that use either SEM or electrical CD metrologies are based on two key factors. First, it exploits a specially designed mark corresponding to a particular CD. Second, instead of mark dimensions the mark image irradiance is measured with a CCD TV camera. In combination, these provide an easy-to-implement and inexpensive technique for controlling exposure tool imaging performance. In actual application, best focus determination shows a repeatability (3/spl sigma/) of less than 5 nm.
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