亚180nm光刻的扫描焦点和CD响应特性测量

半导体技术 Pub Date : 2002-08-07 DOI:10.1109/ASMC.2002.1001638

C. Putnam, H. Magoon, M. Alam, S. Beaumont, C. Fruga, F. Leung, E. Morita, R. Pierce, N. Roberts

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引用次数: 1

摘要

扫描仪技术的快速发展产生了一种情况，即许多工艺层必须以大约0.3 um的最小焦深(DOF)制造，并具有非常严格的临界尺寸(CD)控制。本文探讨了光学临界尺寸(以前称为OCD，现在称为MX-SMP)技术在晶圆上测量和评估焦点以及CD响应的应用。

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Scanner focus and CD response characterization metrology for sub 180 nm lithography

The rapid pace in scanner technology has produced a situation where many process layers will have to be manufactured with a minimum depth of focus (DOF) of approximately 0.3 um with very stringent critical dimension (CD) control. This paper explores the application of Optical Critical Dimension (formerly called OCD, now MX-SMP) technology to measure and evaluate focus in addition to the CD response across the wafer.

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半导体技术

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