采用遗传算法改进高紧凑散热结构的多指InGaP集热器热管理

2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) Pub Date : 2011-12-29 DOI:10.1109/IMPACT.2011.6117268

H. Tseng, Wen-Young Li, Tze-Wei Chen

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引用次数: 1

摘要

为了提高现代异质结双极晶体管(hbt)的热稳定性，人们尝试了多种复杂的结构。然而，现有的用于改善功率HBTs热管理的结构还不够小，不足以实现高效手机中的小型化功率放大器。提出了一种用遗传算法(GA)模拟的高度紧凑的散热结构(HSS)，并在多指InGaP/GaAs集热器HBTs上进行了演示，获得了显著的功耗性能。相比之下，改进后的结果表明，这种新型设计可以大幅降低50%的热阻，并实现55%以上的功率附加效率(PAE)

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Improving thermal management of multi-finger InGaP collector-up HBTs with a highly compact heat-spreading structure by GA

A variety of complex configurations have been attempted to enhance the thermal stability of modern heterojunction bipolar transistors (HBTs). Existing structures for improving thermal management of power HBTs, nevertheless, are not small enough to realize miniaturized power amplifiers in high-efficiency cellular phones. A highly compact heat-spreading structure (HSS) simulated by the genetic algorithm (GA) is proposed, and the demonstration on multi-finger InGaP/GaAs collector-up HBTs, which show noticeable power performance, is presented. Comparatively, the improved results indicate that the thermal resistance can be substantially decreased by 50%, and a power-added efficiency (PAE) more than 55% is achieved from this novel design

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2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

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