用单脉冲电荷泵送方法表征浮体晶体管的缺陷

IF 1.4 4区 工程技术
M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
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引用次数: 0

摘要

浮体沟道上的场效应晶体管已被广泛应用,如三维nand闪存和基于绝缘体上硅晶圆的高性能器件。由于这些晶体管没有身体接触,表征缺陷状态的传统技术无法实现。采用单脉冲电荷抽运(SPCP)方法对浮体晶体管的缺陷态分布进行了表征。三端电晶体(无体接触)的SPCP方法与传统电荷抽运方法或四端电晶体(有体接触)的SPCP方法的结果吻合较好。通过监测三端多晶硅晶体管在偏置应力测试中缺陷态密度的增加,验证了浮体器件SPCP测量的有效性。SPCP方法能够以较高的分辨率检测出浮体晶体管的缺陷状态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defect characterization in floating body transistors using a single pulse charge pumping method
Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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