M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
{"title":"用单脉冲电荷泵送方法表征浮体晶体管的缺陷","authors":"M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi","doi":"10.1116/6.0001172","DOIUrl":null,"url":null,"abstract":"Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"11 1","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2021-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defect characterization in floating body transistors using a single pulse charge pumping method\",\"authors\":\"M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi\",\"doi\":\"10.1116/6.0001172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.\",\"PeriodicalId\":17495,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology B\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2021-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0001172\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001172","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defect characterization in floating body transistors using a single pulse charge pumping method
Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.
期刊介绍:
Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.