R. Iijima, M. Takayanagi, T. Yamaguchi, M. Koyama, A. Nishiyama
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Experimental clarification of mobility determining factors in HfSiON CMISFET with various film compositions
Dominant scattering mechanisms for both electrons and holes in HfSiON MISFET were examined systematically by using the newly developed pulse measurement technique. Mobility determining factors for electrons and holes in various effective field (Eeff) regions were identified. In addition, the influence of two elements of Hf and N on the mobility in the operational Eeff region was investigated and guidelines for improving performance of HfSiON-CMOS devices were presented
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