嵌入式beol 3D多片集成:热和互连考虑

Ankit Kaul, Sreejith Kochupurackal Rajan, Md Obaidul Hossen, G. May, M. Bakir
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引用次数: 8

摘要

本文提出了一种嵌入beol的芯片集成方案,用于高密度三维集成。该方案代表了一个具有多个设备层(初级和嵌入式层)的系统,其中自定义小芯片,如稳压模块,I/O驱动器,RF前端芯片等被嵌入到具有单片存储设备层(如电阻性RAM)的应用处理器层的BEOL中。提出的集成方案进行了热评估,以研究设计参数对初级和嵌入式层热运行的影响,并进行了瞬态分析,以估计层间热耦合的程度。稳态运行的结果表明了这种集成方法的热可行性。双面冷却大大减少了瞬态运行时的层间热耦合(第1层到第3层耦合:空气冷却85%,双面冷却65%)。我们还提出并演示了金属化学镀和机械自对准作为beol嵌入式集成的使能技术,以促进低温,低压和高互连密度的模间键合。在50×50铜柱区域阵列的所有被检查的对角柱上验证了装配后Ni化学沉积键合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BEOL-Embedded 3D Polylithic Integration: Thermal and Interconnection Considerations
In this paper, a BEOL-embedded chiplet integration scheme is proposed for dense 3D integration. This scheme represents a system with multiple device tiers (primary and embedded tiers) where custom chiplets, such as voltage regulator modules, I/O drivers, RF front-end chips, etc. are embedded into the BEOL of an application processor tier with a monolithic memory device tier, such as resistive RAM. The proposed integration scheme is thermally evaluated to investigate the effects of design parameters on the thermal operation of the primary and embedded tiers, along with transient analysis to estimate the extent of inter-tier thermal coupling. Results for steady-state operation suggest the thermal viability of such an integration approach. Considerable reduction in inter-tier thermal coupling for transient operation was achieved with dual-sided cooling (tier 1 to tier 3 coupling: 85% for air-cooling, reduced to 65% for dual-sided cooling). We also propose and demonstrate metal electroless plating in addition to mechanical self-alignment as an enabling technology for BEOL-embedded integration to facilitate low-temperature, low-pressure, and high interconnect density inter-die bonding. Post assembly Ni electroless deposited bonding was verified across all inspected diagonal pillars in an area array of 50×50 copper pillars.
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