分子模拟对多孔低钾材料表征的贡献

L. Broussous, M. Lépinay, B. Coasne, C. Licitra, F. Bertin, V. Rouessac, A. Ayral
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引用次数: 0

摘要

采用统计力学、分子模拟和椭圆孔率法对SiOCH低钾多孔薄膜的表面孔隙率进行了研究。通过等离子体刻蚀和湿法清洗对薄膜进行改性。溶剂在表面上吸附的数值模拟突出了溶剂亲和力的变化取决于化学表面组成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contribution of molecular simulation to the characterization of porous low-k materials
This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.
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