用于高亮度LED封装的直接镀铜技术

H. Ru, V. Wei, T. Jiang, M. Chiu
{"title":"用于高亮度LED封装的直接镀铜技术","authors":"H. Ru, V. Wei, T. Jiang, M. Chiu","doi":"10.1109/IMPACT.2011.6117219","DOIUrl":null,"url":null,"abstract":"Direct Plated Copper (DPC) on ceramic substrate is a patented process by Tong Hsing that has been utilized as an outstanding solution for high brightness LED (HBLED) assembly for over ten years. DPC substrate offers several key attributes such as good TCE match to semiconductor materials, high thermal conductivity, low electrical resistance conductor traces, good reliable at high temperatures (>340°C), precise features, and ease of large format assembly. In additions, this ceramic solution also achieves fine line resolution allowing high density of devices and circuitry, proven reliability, mechanically rugged ceramic construction, and reasonable cost. DPC is implanted with seed layers on aluminum nitride (AlN) or alumina (Al2O3) by sputtering. Then photolithographic procedures are utilized to develop the circuit pattern. Then Cu and Ni layers are plated on top of seed layers to form a solid structure for circuitry. Based on ceramic and thick copper construction, the DPC substrate provides outstanding thermal and electrical performance for applications in high power or high current devices.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"18 1","pages":"311-314"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Direct plated copper technology for high brightness LED packaging\",\"authors\":\"H. Ru, V. Wei, T. Jiang, M. Chiu\",\"doi\":\"10.1109/IMPACT.2011.6117219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Direct Plated Copper (DPC) on ceramic substrate is a patented process by Tong Hsing that has been utilized as an outstanding solution for high brightness LED (HBLED) assembly for over ten years. DPC substrate offers several key attributes such as good TCE match to semiconductor materials, high thermal conductivity, low electrical resistance conductor traces, good reliable at high temperatures (>340°C), precise features, and ease of large format assembly. In additions, this ceramic solution also achieves fine line resolution allowing high density of devices and circuitry, proven reliability, mechanically rugged ceramic construction, and reasonable cost. DPC is implanted with seed layers on aluminum nitride (AlN) or alumina (Al2O3) by sputtering. Then photolithographic procedures are utilized to develop the circuit pattern. Then Cu and Ni layers are plated on top of seed layers to form a solid structure for circuitry. Based on ceramic and thick copper construction, the DPC substrate provides outstanding thermal and electrical performance for applications in high power or high current devices.\",\"PeriodicalId\":6360,\"journal\":{\"name\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"volume\":\"18 1\",\"pages\":\"311-314\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2011.6117219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2011.6117219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21

摘要

陶瓷基板上直接镀铜(DPC)是通兴公司的专利工艺,十多年来一直被用作高亮度LED (HBLED)组装的杰出解决方案。DPC基板具有几个关键属性,例如与半导体材料良好的TCE匹配,高导热性,低电阻导体走线,在高温(>340°C)下良好的可靠性,精确的功能以及易于大规模组装。此外,该陶瓷解决方案还实现了精细的线分辨率,允许高密度的器件和电路,经过验证的可靠性,机械坚固的陶瓷结构和合理的成本。采用溅射法在氮化铝(AlN)或氧化铝(Al2O3)表面植入DPC种子层。然后利用光刻程序来开发电路图案。然后将Cu和Ni层镀在种子层的顶部,形成电路的固体结构。基于陶瓷和厚铜结构,DPC基板为高功率或大电流器件的应用提供了出色的热学和电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct plated copper technology for high brightness LED packaging
Direct Plated Copper (DPC) on ceramic substrate is a patented process by Tong Hsing that has been utilized as an outstanding solution for high brightness LED (HBLED) assembly for over ten years. DPC substrate offers several key attributes such as good TCE match to semiconductor materials, high thermal conductivity, low electrical resistance conductor traces, good reliable at high temperatures (>340°C), precise features, and ease of large format assembly. In additions, this ceramic solution also achieves fine line resolution allowing high density of devices and circuitry, proven reliability, mechanically rugged ceramic construction, and reasonable cost. DPC is implanted with seed layers on aluminum nitride (AlN) or alumina (Al2O3) by sputtering. Then photolithographic procedures are utilized to develop the circuit pattern. Then Cu and Ni layers are plated on top of seed layers to form a solid structure for circuitry. Based on ceramic and thick copper construction, the DPC substrate provides outstanding thermal and electrical performance for applications in high power or high current devices.
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