用于未来电源开关系统的AlGaN/GaN器件

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609355

D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa

{"title":"用于未来电源开关系统的AlGaN/GaN器件","authors":"D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa","doi":"10.1109/IEDM.2005.1609355","DOIUrl":null,"url":null,"abstract":"GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained RonA of the FET is 1.9 mOmegacm2, which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"34 1","pages":"377-380"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"AlGaN/GaN devices for future power switching systems\",\"authors\":\"D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa\",\"doi\":\"10.1109/IEDM.2005.1609355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained RonA of the FET is 1.9 mOmegacm2, which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"34 1\",\"pages\":\"377-380\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

针对GaN/AlGaN器件在电源开关系统中的应用，提出了GaN/AlGaN器件技术。为了降低导通电阻(Ron)，我们开发了用于GaN/AlGaN HFET的SL(超晶格)封盖和QA(季元合金)过层技术。此外，我们在Si(111)衬底上生长的GaN/AlGaN异质结构在保持相同2DEG密度的情况下实现了几乎相同的迁移率，这将使成本与传统Si(111)相当。实验得到的FET的RonA为1.9 mOmegacm2，比Si的RonA低14倍。此外，研究了一种在r面蓝宝石上实现GaN/AlGaN场效应管增强模式工作的新方法，该方法可以生长出无极化电荷的非极性AlGaN/GaN异质结构

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AlGaN/GaN devices for future power switching systems

GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (Ron), we developed SL (super lattice) capping and QA (quaternary alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained RonA of the FET is 1.9 mOmegacm2, which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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