WLCSP微球定位技术的发展

C. H. Chen, Y. F. Chen, T. Lin, Jerry Lee, Y. H. Lin, S. Chiu
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引用次数: 0

摘要

半导体先进封装的发展趋势是向细间距和高I/O密度方向发展。晶圆级封装是解决小间距和高I/O密度集成电路生产的好方法,特别是晶圆级芯片规模封装(WLCSP)封装胶带。传统的凸点工艺,如印刷[1]、电镀[2]、球装[3-5]等,都是通过在晶圆上产生凸点来实现的。浆糊印刷技术在合金成分方面是非常通用的,但对于100um高的凸起,其间距限制在200um左右。由于资金和操作成本高,电镀技术在较小的设施中使用有些限制。此外,像SnAgCu这样的三元合金很难得到一致的结果。也有一个实际的上限,可以产生的颠簸的大小,大多数应用罕见的小间距颠簸。球贴装技术使用焊料球体通过金属模板一次性滴到晶圆上。该技术直接在硅片上产生凸点,具有高通量和一致的凸点结果。不使用电镀电解液的球座工艺降低了成本和化学污染。该技术适用于许多应用,但与该技术相关的几个问题限制了其在大批量和高产量应用中的广泛应用。这些限制包括球体的尺寸有一个实际的下限,在执行的焊接球体和晶圆之间的模板可能会失效,导致所有球体释放到工具中(通常被称为爆裂或逃逸),并且产量在统计上很低。为了获得高I/O密度的集成电路要求,WLCSP I/O焊盘分布式设计的趋势是减小I/O节距,增大I/O密度,从而影响滚珠安装工艺中焊球尺寸的应用,要求WLCSP微滚珠安装技术。该技术存在几个问题,即特定的投球位置和脱出问题。影响微球安装技术性能的最重要因素是准确的滴注参数、钢架质量和回流条件。本文成功地在300mm晶圆上制备了直径小于100um、凹凸间距为130um的WLCSP微球。在I/ o为~ 2KK的晶圆上放置70um球体时,实现了99.99%以上的良率,且没有缺失凸点和桥凸点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Micro-ball placement technology for WLCSP
The trend of semiconductor advance packaging development is toward fine pitch and high I/O density. Wafer level package is good way to resolve fine pitch and high I/O density IC productions, especially package tape of Wafer Level Chip Scale Package (WLCSP). In traditional bumping process, such as printing [1], electric-plating [2] and ball mount [3–5], it is done by producing bumps on wafers. The paste printing technologies are very versatile with respect to the alloy composition that can be use, but is limited to pitches around 200um for 100um tall bumps. The electric-plating technique is somewhat limited for use in smaller facilities due to the high capital and operation costs. In addition, ternary alloys, like SnAgCu are difficult to plate with consistent results. There is also a practical upper limit to the size of the bump that can be produced, and most applications rare for fine pitch bumping. Ball mount technology uses performed solder spheres dropping through a metal template onto wafer at once. This technology is directly producing bumps on wafer which with high throughput and consistent bump results. Ball mounts process without using electric-plating electrolyte decrease cost and chemical pollution. This technique is applicable for many applications but there are several issues are associated with this technology that limits its widespread use in high volume and high yield applications. These limitations include of there is a practical lower limit to the size of sphere that can be dropped, the stencil between the performed solder spheres and the wafer can fail, causing a release of all the spheres into the tool (often referred to as bursts or escapes), and the yields are statistically low. To get high I/O density IC request, the trend of WLCSP I/O pad distributed design is toward to reduce I/O pitch and increase I/O density, and therefore impact solder ball size application of ball mount process, WLCSP Micro-ball mount technology is requested. There are several issues are associated with this technology that certain ball dropping position and escape issue. The most important factors associated with performance of Micro-ball mount technology are accurate dropping parameter, stencil quality and reflow condition. In this paper, we successfully produced WLCSP Micro-ball which diameter lower than 100um with bump pitch 130um onto 300mm wafers. Yield more than 99.99% without missing bump and bridge bump were realized for placing 70um spheres onto wafers with ∼2KK I/Os.
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